Ferroelectric transistors with monolayer molybdenum disulfide and ultra-thin aluminum-doped hafnium oxide

Keyphrases

• Ultrathin 100%
• Monolayer Molybdenum Disulfide 100%
• Ferroelectric Field-effect Transistor (FeFET) 100%
• Aluminum Doping 100%
• Doped Hafnium Oxide 100%
• Molybdenite 50%
• Ferroelectric HfO2 50%
• Doped HfO2 50%
• Hysteresis 25%
• HfO2 25%
• Two Dimensional 25%
• Chemical Vapor Deposition 25%
• Channel Material 25%
• Ferroelectric Polarization 25%
• Ferroelectric Materials 25%
• Dielectric Interface 25%
• Memory Application 25%
• Two Dimensional Materials 25%
• 10-year Data 25%
• Molybdenum Disulfide MoS2 25%
• Wake-up 25%
• Logic Application 25%
• Clockwise Hysteresis 25%
• Data Retention 25%
• Remnant Polarization 25%
• Low Power Logic 25%
• Low-power Memory 25%
• Ferroelectric Gate Dielectric 25%
• Ferroelectric Memory 25%
• Metal-ferroelectric-metal Capacitor 25%
• Polarization Fatigue 25%
• Bulk Traps 25%

Material Science

• Transistor 100%
• Monolayers 100%
• Oxide Compound 100%
• Ferroelectric Material 100%
• Aluminum 100%
• Molybdenum 100%
• Hafnium 100%
• Dielectric Material 22%
• Chemical Vapor Deposition 11%
• Capacitor 11%
• Two-Dimensional Material 11%

Engineering

• Monolayer 100%
• Molybdenum Disulfide 100%
• Gate Dielectric 20%
• Chemical Vapor Deposition 20%
• Vapor Deposition 20%
• Two Dimensional 20%
• Dielectrics 20%
• Two-Dimensional Materials 20%
• Data Retention 20%