Ferroelectric aluminum-doped hafnium oxide for memory applications

Hojoon Ryu, Kai Xu, Ji Guo, Wenjuan Zhu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ferroelectric complex perovskites, such as lead zirconate titanate (PZT), strontium bismuth tantalate (SBT), and lead magnesium niobate-lead titanate (PMN-PT) have been widely used in ferroelectric devices. However, these traditional ferroelectric materials have a limitation in thickness scaling and are incompatible with CMOS processes. In the last few years, doped metal oxides, including hafnium oxide (Hf02) and zirconium oxide (ZrO2), were found to have ferroelectric phase [1]-[2]. Ferroelectric HfO2 has the advantages of a high coercive field, excellent scalability (down to 2.5nm), and good compatibility with CMOS processing [3]-[7]. In this paper, we systematically investigate Al-doped HfO2 with various electrodes, Al compositions and annealing temperatures. We found that Ti/Pd is a promising candidate as top electrode material for ferroelectric HfO2.

Original languageEnglish (US)
Title of host publication2018 76th Device Research Conference, DRC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781538630280
DOIs
StatePublished - Aug 20 2018
Event76th Device Research Conference, DRC 2018 - Santa Barbara, United States
Duration: Jun 24 2018Jun 27 2018

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2018-June
ISSN (Print)1548-3770

Other

Other76th Device Research Conference, DRC 2018
CountryUnited States
CitySanta Barbara
Period6/24/186/27/18

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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