TY - GEN
T1 - Ferroelectric aluminum-doped hafnium oxide for memory applications
AU - Ryu, Hojoon
AU - Xu, Kai
AU - Guo, Ji
AU - Zhu, Wenjuan
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/8/20
Y1 - 2018/8/20
N2 - Ferroelectric complex perovskites, such as lead zirconate titanate (PZT), strontium bismuth tantalate (SBT), and lead magnesium niobate-lead titanate (PMN-PT) have been widely used in ferroelectric devices. However, these traditional ferroelectric materials have a limitation in thickness scaling and are incompatible with CMOS processes. In the last few years, doped metal oxides, including hafnium oxide (Hf02) and zirconium oxide (ZrO2), were found to have ferroelectric phase [1]-[2]. Ferroelectric HfO2 has the advantages of a high coercive field, excellent scalability (down to 2.5nm), and good compatibility with CMOS processing [3]-[7]. In this paper, we systematically investigate Al-doped HfO2 with various electrodes, Al compositions and annealing temperatures. We found that Ti/Pd is a promising candidate as top electrode material for ferroelectric HfO2.
AB - Ferroelectric complex perovskites, such as lead zirconate titanate (PZT), strontium bismuth tantalate (SBT), and lead magnesium niobate-lead titanate (PMN-PT) have been widely used in ferroelectric devices. However, these traditional ferroelectric materials have a limitation in thickness scaling and are incompatible with CMOS processes. In the last few years, doped metal oxides, including hafnium oxide (Hf02) and zirconium oxide (ZrO2), were found to have ferroelectric phase [1]-[2]. Ferroelectric HfO2 has the advantages of a high coercive field, excellent scalability (down to 2.5nm), and good compatibility with CMOS processing [3]-[7]. In this paper, we systematically investigate Al-doped HfO2 with various electrodes, Al compositions and annealing temperatures. We found that Ti/Pd is a promising candidate as top electrode material for ferroelectric HfO2.
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U2 - 10.1109/DRC.2018.8442244
DO - 10.1109/DRC.2018.8442244
M3 - Conference contribution
AN - SCOPUS:85053206151
SN - 9781538630280
T3 - Device Research Conference - Conference Digest, DRC
BT - 2018 76th Device Research Conference, DRC 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 76th Device Research Conference, DRC 2018
Y2 - 24 June 2018 through 27 June 2018
ER -