Fast timing simulation for submicron hot-carrier degradation

Weishi Sun, Elyse Rosenbaum, Sung Mo Kang

Research output: Contribution to journalConference article

Abstract

This paper presents a new fast timing reliability simulator ILLIADS-R which can simulate hot-carrier degradation in very large integrated circuits. A Region-Wise-Quadratic model is used to fit submicron transistor I-V curves. Using quasi-static models, ILLIADS-R accurately simulates hot-carrier damage in both pMOS and nMOS transistors of large scale CMOS integrated circuits.

Original languageEnglish (US)
Pages (from-to)65-71
Number of pages7
JournalAnnual Proceedings - Reliability Physics (Symposium)
DOIs
StatePublished - 1995
EventProceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA
Duration: Apr 4 1995Apr 6 1995

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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