Abstract
This paper presents a new fast timing reliability simulator ILLIADS-R which can simulate hot-carrier degradation in very large integrated circuits. A Region-Wise-Quadratic model is used to fit submicron transistor I-V curves. Using quasi-static models, ILLIADS-R accurately simulates hot-carrier damage in both pMOS and nMOS transistors of large scale CMOS integrated circuits.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 65-71 |
| Number of pages | 7 |
| Journal | Annual Proceedings - Reliability Physics (Symposium) |
| DOIs | |
| State | Published - 1995 |
| Event | Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA Duration: Apr 4 1995 → Apr 6 1995 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality