Far-infrared stimulated emission tunable by modulation of acoustic phonon scattering in quantum dot structures

Y. Lyanda-Geller, J. P. Leburton

Research output: Contribution to journalArticlepeer-review

Abstract

We propose a new mechanism for far-infrared (FIR) stimulated emission in quantum dot structures with gain and emission frequency modulated by acoustic phonon scattering. This novel mechanism is based on carrier injection into coupled quantum dot structures in the Wannier-Stark localization regime for which current oscillates due to Bragg reflection of acoustic phonons. The population inversion is achieved by engineering the quantum dot coupling and the collector tunnel barrier such that the tunnelling times fall in the range of the acoustic phonon scattering time. Realistic estimates of the gain show that FIR stimulated emission with reasonable current injection is feasible.

Original languageEnglish (US)
Pages (from-to)700-703
Number of pages4
JournalSemiconductor Science and Technology
Volume15
Issue number7
DOIs
StatePublished - Jul 1 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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