Abstract

This paper describes FAMAS - FAult Modeling via Adaptive Simulation: a software tool that models transient faults and evaluates their impact on latch error probabilities through fault injection. The tool integrates DESSIS (a device-physics-level simulator) and SPICE using an adaptive approach. The behavior of electron hole pairs is captured for semiconductor devices under ionic radiation. Changes in bias voltage due to current surge are taken into account in an iterative fashion during the process of fault model construction. Results show that in general, the adaptively simulated fault model results in higher latch error probabilities than the Messenger model under the same process and electrical conditions.

Original languageEnglish (US)
Pages413-417
Number of pages5
StatePublished - Jan 1 1997
EventProceedings of the 1997 10th International Conference on VLSI Design - Hyderabad, India
Duration: Jan 4 1997Jan 7 1997

Other

OtherProceedings of the 1997 10th International Conference on VLSI Design
CityHyderabad, India
Period1/4/971/7/97

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ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Jin, H., Iyer, R. K., Hsueh, M. C., & Covington, M. (1997). FAMAS: FAult Modeling via Adaptive Simulation. 413-417. Paper presented at Proceedings of the 1997 10th International Conference on VLSI Design, Hyderabad, India, .