Fabrication of releasable single-crystal silicon-metal oxide field-effect devices and their deterministic assembly on foreign substrates

Hyun Joong Chung, Tae Il Kim, Hoon Sik Kim, Spencer A. Wells, Sungjin Jo, Numair Ahmed, Yei Hwan Jung, Sang Min Won, Christopher A. Bower, John A. Rogers

Research output: Contribution to journalArticlepeer-review

Abstract

A new class of thin, releasable single-crystal silicon semiconductor device is presented that enables integration of high-performance electronics on nearly any type of substrate. Fully formed metal oxide-semiconductor field-effect transistors with thermally grown gate oxides and integrated circuits constructed with them demonstrate the ideas in devices mounted on substrates ranging from flexible sheets of plastic, to plates of glass and pieces of aluminum foil. Systematic study of the electrical properties indicates field-effect mobilities of ≈710 cm2 V-1 s-1, subthreshold slopes of less than 0.2 V decade-1 and minimal hysteresis, all with little to no dependence on the properties of the substrate due to bottom silicon surfaces that are passivated with thermal oxide. The schemes reported here require only interconnect metallization to be performed on the final device substrate, which thereby minimizes the need for any specialized processing technology, with important consequences in large-area electronics for display systems, flexible/stretchable electronics, or other non-wafer-based devices.

Original languageEnglish (US)
Pages (from-to)3029-3036
Number of pages8
JournalAdvanced Functional Materials
Volume21
Issue number16
DOIs
StatePublished - Aug 23 2011

Keywords

  • flexible electronics
  • semiconductors
  • single crystals
  • transfer printing
  • transistors

ASJC Scopus subject areas

  • Biomaterials
  • Electrochemistry
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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