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Fabrication of nanowires with high aspect ratios utilized by dry etching with SF6: C4F8 and self-limiting thermal oxidation on Si substrate

  • Si Young Park
  • , Sandro J. Di Giacomo
  • , R. Anisha
  • , Paul R. Berger
  • , Phillip E. Thompson
  • , Ilesanmi Adesida

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