Fabrication of InP-based wavelength division multiplexing arrayed wavequide filters using chemically assisted ion beam etching

C. Youtsey; I. Adesida; J. B D Soole; M. R. Amersfoort; H. P. LeBlanc; N. C. Andreadakis; A. Rajhel; C. Caneau; M. A. Koza; R. Bhat

Fabrication of InP-based wavelength division multiplexing arrayed wavequide filters using chemically assisted ion beam etching

C. Youtsey, I. Adesida, J. B D Soole, M. R. Amersfoort, H. P. LeBlanc, N. C. Andreadakis, A. Rajhel, C. Caneau, M. A. Koza, R. Bhat

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Abstract

Chemically assisted ion beam etching using Cl₂ has been used to fabricate InP-based arrayed waveguide filters that demonstrate full polarization independence and excellent performance characteristics. The process is carried out at elevated temperatures of approximately 250 °C to avoid difficulties associated with the low volatility of indium chlorides at lower temperatures. Optimization of the process for smooth, vertical etching is discussed. InP regrowth is successfully carried out on the etched. InGaAsP guides, and measurements of the fabricated devices are presented. The adaptation of the process for angled etching is also demonstrated.

Original language	English (US)
Pages (from-to)	4091-4095
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	14
Issue number	6
State	Published - Nov 1996

ASJC Scopus subject areas

Electrical and Electronic Engineering
Physics and Astronomy (miscellaneous)
Surfaces and Interfaces

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Youtsey, C., Adesida, I., Soole, J. B. D., Amersfoort, M. R., LeBlanc, H. P., Andreadakis, N. C., Rajhel, A., Caneau, C., Koza, M. A., & Bhat, R. (1996). Fabrication of InP-based wavelength division multiplexing arrayed wavequide filters using chemically assisted ion beam etching. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 14(6), 4091-4095.

Fabrication of InP-based wavelength division multiplexing arrayed wavequide filters using chemically assisted ion beam etching. / Youtsey, C.; Adesida, I.; Soole, J. B D et al.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 14, No. 6, 11.1996, p. 4091-4095.

Research output: Contribution to journal › Article › peer-review

Youtsey, C, Adesida, I, Soole, JBD, Amersfoort, MR, LeBlanc, HP, Andreadakis, NC, Rajhel, A, Caneau, C, Koza, MA & Bhat, R 1996, 'Fabrication of InP-based wavelength division multiplexing arrayed wavequide filters using chemically assisted ion beam etching', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 14, no. 6, pp. 4091-4095.

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title = "Fabrication of InP-based wavelength division multiplexing arrayed wavequide filters using chemically assisted ion beam etching",

abstract = "Chemically assisted ion beam etching using Cl2 has been used to fabricate InP-based arrayed waveguide filters that demonstrate full polarization independence and excellent performance characteristics. The process is carried out at elevated temperatures of approximately 250 °C to avoid difficulties associated with the low volatility of indium chlorides at lower temperatures. Optimization of the process for smooth, vertical etching is discussed. InP regrowth is successfully carried out on the etched. InGaAsP guides, and measurements of the fabricated devices are presented. The adaptation of the process for angled etching is also demonstrated.",

author = "C. Youtsey and I. Adesida and Soole, {J. B D} and Amersfoort, {M. R.} and LeBlanc, {H. P.} and Andreadakis, {N. C.} and A. Rajhel and C. Caneau and Koza, {M. A.} and R. Bhat",

year = "1996",

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language = "English (US)",

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pages = "4091--4095",

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T1 - Fabrication of InP-based wavelength division multiplexing arrayed wavequide filters using chemically assisted ion beam etching

AU - Youtsey, C.

AU - Adesida, I.

AU - Soole, J. B D

AU - Amersfoort, M. R.

AU - LeBlanc, H. P.

AU - Andreadakis, N. C.

AU - Rajhel, A.

AU - Caneau, C.

AU - Koza, M. A.

AU - Bhat, R.

PY - 1996/11

Y1 - 1996/11

N2 - Chemically assisted ion beam etching using Cl2 has been used to fabricate InP-based arrayed waveguide filters that demonstrate full polarization independence and excellent performance characteristics. The process is carried out at elevated temperatures of approximately 250 °C to avoid difficulties associated with the low volatility of indium chlorides at lower temperatures. Optimization of the process for smooth, vertical etching is discussed. InP regrowth is successfully carried out on the etched. InGaAsP guides, and measurements of the fabricated devices are presented. The adaptation of the process for angled etching is also demonstrated.

AB - Chemically assisted ion beam etching using Cl2 has been used to fabricate InP-based arrayed waveguide filters that demonstrate full polarization independence and excellent performance characteristics. The process is carried out at elevated temperatures of approximately 250 °C to avoid difficulties associated with the low volatility of indium chlorides at lower temperatures. Optimization of the process for smooth, vertical etching is discussed. InP regrowth is successfully carried out on the etched. InGaAsP guides, and measurements of the fabricated devices are presented. The adaptation of the process for angled etching is also demonstrated.

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Fabrication of InP-based wavelength division multiplexing arrayed wavequide filters using chemically assisted ion beam etching

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