Fabrication of InP-based wavelength division multiplexing arrayed wavequide filters using chemically assisted ion beam etching

C. Youtsey, I. Adesida, J. B D Soole, M. R. Amersfoort, H. P. LeBlanc, N. C. Andreadakis, A. Rajhel, C. Caneau, M. A. Koza, R. Bhat

Research output: Contribution to journalArticlepeer-review

Abstract

Chemically assisted ion beam etching using Cl2 has been used to fabricate InP-based arrayed waveguide filters that demonstrate full polarization independence and excellent performance characteristics. The process is carried out at elevated temperatures of approximately 250 °C to avoid difficulties associated with the low volatility of indium chlorides at lower temperatures. Optimization of the process for smooth, vertical etching is discussed. InP regrowth is successfully carried out on the etched. InGaAsP guides, and measurements of the fabricated devices are presented. The adaptation of the process for angled etching is also demonstrated.

Original languageEnglish (US)
Pages (from-to)4091-4095
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume14
Issue number6
StatePublished - Nov 1996

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

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