Abstract
Fabrication of apertures, slots, and grooves in silicon, gold-palladium, and lithium fluoride has been demonstrated using a 100 kev electron beam. For the LiF films the authors have been able to etch less than 2 nm wide by 50 nm deep grooves on 10 nm centers. Grooves in silicon 8 nm wide by 30 nm deep have been made by reactive ion etching in SF//6. Apertures as small as 8 nm in diameter have been produced in AuPd films self-supported over larger holes in 60 nm thick Si windows.
Original language | English (US) |
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Pages (from-to) | 1091-1095 |
Number of pages | 5 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 1 |
Issue number | 4 |
DOIs | |
State | Published - 1983 |
Externally published | Yes |
Event | Proc of the Int Symp on Electron, Ion, and Photon Beams - Los Angeles, CA, USA Duration: May 31 1983 → Jun 3 1983 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering