Fabrication issues for multiple layers of SOI MOSFET devices

Keyphrases

• Lateral Diffusion 100%
• Multiple Layers 100%
• SOI MOSFET 100%
• MOSFET Device 100%
• Fabrication Issues 100%
• Silica 50%
• Film Thickness 50%
• Dopant 50%
• Thermal Budget 50%
• Small-sized 50%
• Transmission Line Model 50%
• Dopant Profile 50%
• SOI Devices 50%
• Medici 50%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Dopants 100%
• Model Structure 50%
• Electric Lines 50%
• Test Structure 50%
• Silicon Dioxide 50%

Material Science

• Film 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Doping (Additives) 66%
• Silicon 33%
• Film Thickness 33%