Fabrication and transport study of finite lateral superlattices

M. Hannan; R. Grundbacher; P. Fay; I. Adesida; R. W. Giannetta; C. J. Wagner; M. R. Melloch

doi:10.1116/1.589735

Fabrication and transport study of finite lateral superlattices

M. Hannan
, R. Grundbacher
, P. Fay
, I. Adesida
, R. W. Giannetta
, C. J. Wagner
, M. R. Melloch

Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Transport measurements are reported for a two-dimensional electron gas subject to a finite lateral superlattice potential. Devices are fabricated in high mobility GaAs/AlGaAs heterostructures with modulation periods in the range of 2000-3000 Å and differing numbers of gates. Conductance plateaus are observed at gate voltages where the thermopower is stationary. These features indicate the possible formation of effective one-dimensional conductance channels through the potential landscape formed by the lateral gates. The plateau conductances are much less than the basic quantum unit (2e²/h).

Original language	English (US)
Pages (from-to)	2821-2824
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	15
Issue number	6
DOIs	https://doi.org/10.1116/1.589735
State	Published - Nov 1997

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.589735

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abstract = "Transport measurements are reported for a two-dimensional electron gas subject to a finite lateral superlattice potential. Devices are fabricated in high mobility GaAs/AlGaAs heterostructures with modulation periods in the range of 2000-3000 {\AA} and differing numbers of gates. Conductance plateaus are observed at gate voltages where the thermopower is stationary. These features indicate the possible formation of effective one-dimensional conductance channels through the potential landscape formed by the lateral gates. The plateau conductances are much less than the basic quantum unit (2e2/h).",

author = "M. Hannan and R. Grundbacher and P. Fay and I. Adesida and Giannetta, \{R. W.\} and Wagner, \{C. J.\} and Melloch, \{M. R.\}",

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doi = "10.1116/1.589735",

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T1 - Fabrication and transport study of finite lateral superlattices

AU - Hannan, M.

AU - Grundbacher, R.

AU - Fay, P.

AU - Adesida, I.

AU - Giannetta, R. W.

AU - Wagner, C. J.

AU - Melloch, M. R.

PY - 1997/11

Y1 - 1997/11

N2 - Transport measurements are reported for a two-dimensional electron gas subject to a finite lateral superlattice potential. Devices are fabricated in high mobility GaAs/AlGaAs heterostructures with modulation periods in the range of 2000-3000 Å and differing numbers of gates. Conductance plateaus are observed at gate voltages where the thermopower is stationary. These features indicate the possible formation of effective one-dimensional conductance channels through the potential landscape formed by the lateral gates. The plateau conductances are much less than the basic quantum unit (2e2/h).

AB - Transport measurements are reported for a two-dimensional electron gas subject to a finite lateral superlattice potential. Devices are fabricated in high mobility GaAs/AlGaAs heterostructures with modulation periods in the range of 2000-3000 Å and differing numbers of gates. Conductance plateaus are observed at gate voltages where the thermopower is stationary. These features indicate the possible formation of effective one-dimensional conductance channels through the potential landscape formed by the lateral gates. The plateau conductances are much less than the basic quantum unit (2e2/h).

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Fabrication and transport study of finite lateral superlattices

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