Fabrication and characterization of short gate-length InAℓAs/InGaAs/InP MODFETS

I. Adesida; A. A. Ketterson; T. L. Brock; J. Laskar; J. Kolodzey; O. Aina; H. Hier

doi:10.1016/0167-9317(89)90075-0

Fabrication and characterization of short gate-length InAℓAs/InGaAs/InP MODFETS

I. Adesida, A. A. Ketterson, T. L. Brock, J. Laskar, J. Kolodzey, O. Aina, H. Hier

Research output: Contribution to journal › Article › peer-review

Abstract

InAℓAs/InGaAs/InP MODFETS with gate lengths varying from 0.15 μm to 0.34 μm have been fabricated and characterized. Extrinsic transconductance as high as 545 mS/mm has been obtained with very good pinch-off characteristics. A unity current gain cut-off frequency f_T of 112 GHz was obtained for 0.15 μm gate-length devices with f_T decreasing as gate length increases. This high performance shows that InAℓAs/InGaAs/InP material system will be useful for millimeter wave analog and digital devices.

Original language	English (US)
Pages (from-to)	345-348
Number of pages	4
Journal	Microelectronic Engineering
Volume	9
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(89)90075-0
State	Published - May 1989
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Online availability

10.1016/0167-9317(89)90075-0

Library availability

Discover UIUC Full Text

Cite this

@article{5dd98695ec0d4ef5a1f4c0cd8a2d653e,

title = "Fabrication and characterization of short gate-length InAℓAs/InGaAs/InP MODFETS",

abstract = "InAℓAs/InGaAs/InP MODFETS with gate lengths varying from 0.15 μm to 0.34 μm have been fabricated and characterized. Extrinsic transconductance as high as 545 mS/mm has been obtained with very good pinch-off characteristics. A unity current gain cut-off frequency fT of 112 GHz was obtained for 0.15 μm gate-length devices with fT decreasing as gate length increases. This high performance shows that InAℓAs/InGaAs/InP material system will be useful for millimeter wave analog and digital devices.",

author = "I. Adesida and Ketterson, {A. A.} and Brock, {T. L.} and J. Laskar and J. Kolodzey and O. Aina and H. Hier",

note = "Funding Information: The technical contributions of John Hughes are gratefully acknowledged. This work was supported by NSF Grant CDR 85-22666 and JSEP Grant NOOO14-C-0149.",

year = "1989",

month = may,

doi = "10.1016/0167-9317(89)90075-0",

language = "English (US)",

volume = "9",

pages = "345--348",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Fabrication and characterization of short gate-length InAℓAs/InGaAs/InP MODFETS

AU - Adesida, I.

AU - Ketterson, A. A.

AU - Brock, T. L.

AU - Laskar, J.

AU - Kolodzey, J.

AU - Aina, O.

AU - Hier, H.

N1 - Funding Information: The technical contributions of John Hughes are gratefully acknowledged. This work was supported by NSF Grant CDR 85-22666 and JSEP Grant NOOO14-C-0149.

PY - 1989/5

Y1 - 1989/5

N2 - InAℓAs/InGaAs/InP MODFETS with gate lengths varying from 0.15 μm to 0.34 μm have been fabricated and characterized. Extrinsic transconductance as high as 545 mS/mm has been obtained with very good pinch-off characteristics. A unity current gain cut-off frequency fT of 112 GHz was obtained for 0.15 μm gate-length devices with fT decreasing as gate length increases. This high performance shows that InAℓAs/InGaAs/InP material system will be useful for millimeter wave analog and digital devices.

AB - InAℓAs/InGaAs/InP MODFETS with gate lengths varying from 0.15 μm to 0.34 μm have been fabricated and characterized. Extrinsic transconductance as high as 545 mS/mm has been obtained with very good pinch-off characteristics. A unity current gain cut-off frequency fT of 112 GHz was obtained for 0.15 μm gate-length devices with fT decreasing as gate length increases. This high performance shows that InAℓAs/InGaAs/InP material system will be useful for millimeter wave analog and digital devices.

UR - http://www.scopus.com/inward/record.url?scp=0024662512&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024662512&partnerID=8YFLogxK

U2 - 10.1016/0167-9317(89)90075-0

DO - 10.1016/0167-9317(89)90075-0

M3 - Article

AN - SCOPUS:0024662512

SN - 0167-9317

VL - 9

SP - 345

EP - 348

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

Fabrication and characterization of short gate-length InAℓAs/InGaAs/InP MODFETS

Abstract

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this