Fabrication and characterization of short gate-length InAℓAs/InGaAs/InP MODFETS

I. Adesida, A. A. Ketterson, T. L. Brock, J. Laskar, J. Kolodzey, O. Aina, H. Hier

Research output: Contribution to journalArticlepeer-review

Abstract

InAℓAs/InGaAs/InP MODFETS with gate lengths varying from 0.15 μm to 0.34 μm have been fabricated and characterized. Extrinsic transconductance as high as 545 mS/mm has been obtained with very good pinch-off characteristics. A unity current gain cut-off frequency fT of 112 GHz was obtained for 0.15 μm gate-length devices with fT decreasing as gate length increases. This high performance shows that InAℓAs/InGaAs/InP material system will be useful for millimeter wave analog and digital devices.

Original languageEnglish (US)
Pages (from-to)345-348
Number of pages4
JournalMicroelectronic Engineering
Volume9
Issue number1-4
DOIs
StatePublished - May 1989

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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