Fabrication and characterization of novel hybrid green light emitting diodes based on substituting n-type ZnO for n-type GaN in an inverted p-n junction

Keyphrases

• P-n Junction 100%
• N-type GaN 100%
• Novel Hybrids 100%
• Green Light-emitting Diodes 100%
• NZnO 66%
• Atomic Force Microscopy 33%
• Photoluminescence 33%
• Scanning Electron Microscope 33%
• Sapphire 33%
• Indium Gallium Nitride (InGaN) 33%
• Multiple Quantum Wells 33%
• Hybrid System 33%
• Annealing Effect 33%
• Solvent Effect 33%
• High-resolution X-ray Diffraction (HRXRD) 33%
• P-GaN 33%
• Solvent Vapor Annealing 33%
• Solvent Etching 33%

Material Science

• Light-Emitting Diode 100%
• ZnO 100%
• Scanning Electron Microscopy 25%
• Annealing 25%
• Quantum Well 25%
• Photoluminescence 25%
• Aluminum Nitride 25%
• Sapphire 25%
• Atomic Force Microscopy 25%

Engineering

• Light-Emitting Diode 100%
• High Resolution 33%
• Ray Diffraction 33%
• Quantum Well 33%
• Atomic Force Microscopy 33%
• Scanning Electron Microscope 33%