Abstract
In this letter, we report the first demonstration of InGaP/GaAs heterojunction bipolar transistors (HBTs) on germanium-on-insulator (GOI) substrates. We have performed physical characterization of the epitaxial layers to verify the high quality of the III-V epitaxial material grown on the GOI substrates and performed dc characterization of large-area InGaP/GaAs HBTs fabricated on the substrates. The InGaP/ GaAs HBTs realized on GOI substrates were compared with identical devices grown on bulk germanium substrates and similar devices on semi-insulating GaAs substrates.
Original language | English (US) |
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Pages (from-to) | 438-440 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 26 |
Issue number | 7 |
DOIs | |
State | Published - Jul 2005 |
Externally published | Yes |
Keywords
- GaAs
- Germanium
- Germanium-on-insulator (GOI)
- Heterojunction bipolar transistor (HBT)
- InGaP
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering