Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates

Shawn G. Thomas, Eric S. Johnson, Clarence Tracy, Papu Maniar, Xiuling Li, Bradley Roof, Quesnell Hartmann, David A. Ahmari

Research output: Contribution to journalArticle

Abstract

In this letter, we report the first demonstration of InGaP/GaAs heterojunction bipolar transistors (HBTs) on germanium-on-insulator (GOI) substrates. We have performed physical characterization of the epitaxial layers to verify the high quality of the III-V epitaxial material grown on the GOI substrates and performed dc characterization of large-area InGaP/GaAs HBTs fabricated on the substrates. The InGaP/ GaAs HBTs realized on GOI substrates were compared with identical devices grown on bulk germanium substrates and similar devices on semi-insulating GaAs substrates.

Original languageEnglish (US)
Pages (from-to)438-440
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number7
DOIs
StatePublished - Jul 1 2005
Externally publishedYes

Keywords

  • GaAs
  • Germanium
  • Germanium-on-insulator (GOI)
  • Heterojunction bipolar transistor (HBT)
  • InGaP

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Thomas, S. G., Johnson, E. S., Tracy, C., Maniar, P., Li, X., Roof, B., Hartmann, Q., & Ahmari, D. A. (2005). Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates. IEEE Electron Device Letters, 26(7), 438-440. https://doi.org/10.1109/LED.2005.851132