Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates

Shawn G. Thomas; Eric S. Johnson; Clarence Tracy; Papu Maniar; Xiuling Li; Bradley Roof; Quesnell Hartmann; David A. Ahmari

doi:10.1109/LED.2005.851132

Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates

Shawn G. Thomas, Eric S. Johnson, Clarence Tracy, Papu Maniar, Xiuling Li, Bradley Roof, Quesnell Hartmann, David A. Ahmari

Research output: Contribution to journal › Article › peer-review

Abstract

In this letter, we report the first demonstration of InGaP/GaAs heterojunction bipolar transistors (HBTs) on germanium-on-insulator (GOI) substrates. We have performed physical characterization of the epitaxial layers to verify the high quality of the III-V epitaxial material grown on the GOI substrates and performed dc characterization of large-area InGaP/GaAs HBTs fabricated on the substrates. The InGaP/ GaAs HBTs realized on GOI substrates were compared with identical devices grown on bulk germanium substrates and similar devices on semi-insulating GaAs substrates.

Original language	English (US)
Pages (from-to)	438-440
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	7
DOIs	https://doi.org/10.1109/LED.2005.851132
State	Published - Jul 2005
Externally published	Yes

Keywords

GaAs
Germanium
Germanium-on-insulator (GOI)
Heterojunction bipolar transistor (HBT)
InGaP

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/LED.2005.851132

Library availability

Discover UIUC Full Text

Cite this

@article{aa538803fffb4cfa9a575ec5ef4b898f,

title = "Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates",

abstract = "In this letter, we report the first demonstration of InGaP/GaAs heterojunction bipolar transistors (HBTs) on germanium-on-insulator (GOI) substrates. We have performed physical characterization of the epitaxial layers to verify the high quality of the III-V epitaxial material grown on the GOI substrates and performed dc characterization of large-area InGaP/GaAs HBTs fabricated on the substrates. The InGaP/ GaAs HBTs realized on GOI substrates were compared with identical devices grown on bulk germanium substrates and similar devices on semi-insulating GaAs substrates.",

keywords = "GaAs, Germanium, Germanium-on-insulator (GOI), Heterojunction bipolar transistor (HBT), InGaP",

author = "Thomas, {Shawn G.} and Johnson, {Eric S.} and Clarence Tracy and Papu Maniar and Xiuling Li and Bradley Roof and Quesnell Hartmann and Ahmari, {David A.}",

year = "2005",

month = jul,

doi = "10.1109/LED.2005.851132",

language = "English (US)",

volume = "26",

pages = "438--440",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates

AU - Thomas, Shawn G.

AU - Johnson, Eric S.

AU - Tracy, Clarence

AU - Maniar, Papu

AU - Li, Xiuling

AU - Roof, Bradley

AU - Hartmann, Quesnell

AU - Ahmari, David A.

PY - 2005/7

Y1 - 2005/7

N2 - In this letter, we report the first demonstration of InGaP/GaAs heterojunction bipolar transistors (HBTs) on germanium-on-insulator (GOI) substrates. We have performed physical characterization of the epitaxial layers to verify the high quality of the III-V epitaxial material grown on the GOI substrates and performed dc characterization of large-area InGaP/GaAs HBTs fabricated on the substrates. The InGaP/ GaAs HBTs realized on GOI substrates were compared with identical devices grown on bulk germanium substrates and similar devices on semi-insulating GaAs substrates.

AB - In this letter, we report the first demonstration of InGaP/GaAs heterojunction bipolar transistors (HBTs) on germanium-on-insulator (GOI) substrates. We have performed physical characterization of the epitaxial layers to verify the high quality of the III-V epitaxial material grown on the GOI substrates and performed dc characterization of large-area InGaP/GaAs HBTs fabricated on the substrates. The InGaP/ GaAs HBTs realized on GOI substrates were compared with identical devices grown on bulk germanium substrates and similar devices on semi-insulating GaAs substrates.

KW - GaAs

KW - Germanium

KW - Germanium-on-insulator (GOI)

KW - Heterojunction bipolar transistor (HBT)

KW - InGaP

UR - http://www.scopus.com/inward/record.url?scp=22944441602&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=22944441602&partnerID=8YFLogxK

U2 - 10.1109/LED.2005.851132

DO - 10.1109/LED.2005.851132

M3 - Article

AN - SCOPUS:22944441602

SN - 0741-3106

VL - 26

SP - 438

EP - 440

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

ER -

Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates

Abstract

Keywords

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this