Fabrication and characterization of InGaAs-GaAs quantum wire arrays by selective-area metalorganic chemical vapor deposition

Keyphrases

• Metal-organic Chemical Vapor Deposition (MOCVD) 100%
• InGaAs 100%
• Selective-area 100%
• Wire Array 100%
• GaAs Quantum Wire 100%
• Quantum Wire 80%
• Silicon Dioxide 40%
• Optical Characterization 40%
• Nanometer Scale 20%
• Growth Profile 20%
• Gallium Arsenide 20%
• High-resolution 20%
• Lift-off 20%
• Growth Conditions 20%
• Lateral Dimension 20%
• Pattern-based Approach 20%
• Selective Growth 20%
• Wire Structure 20%
• Electron Beam Lithography 20%
• Patterned Substrate 20%
• Crystal Direction 20%
• Time-resolved Photoluminescence 20%
• Strained Layers 20%
• Low-temperature Photoluminescence 20%
• Diffusion-controlled Growth 20%
• Wire Pattern 20%
• Growth Simulation 20%
• Nonlinear Enhancement 20%
• Gas-phase Diffusion 20%
• Growth Structure 20%

Engineering

• Chemical Vapor Deposition 100%
• Vapor Deposition 100%
• Gallium Arsenide 100%
• Indium Gallium Arsenide 100%
• Quantum Wire 100%
• Silicon Dioxide 40%
• High Resolution 20%
• Low-Temperature 20%
• Nanometre 20%
• Growth Condition 20%
• Patterning Technique 20%
• Gas-Phase 20%
• Electron Optical Lithography 20%
• Strained Layer 20%
• Growth Profile 20%

Material Science

• Silicon Dioxide 100%
• Gallium Arsenide 100%
• Chemical Vapor Deposition 100%
• Indium Gallium Arsenide 100%
• Photoluminescence 100%
• Lithography 50%
• Poly Methyl Methacrylate 50%