Keyphrases
Metal-organic Chemical Vapor Deposition (MOCVD)
100%
InGaAs
100%
Selective-area
100%
Wire Array
100%
GaAs Quantum Wire
100%
Quantum Wire
80%
Silicon Dioxide
40%
Optical Characterization
40%
Nanometer Scale
20%
Growth Profile
20%
Gallium Arsenide
20%
High-resolution
20%
Lift-off
20%
Growth Conditions
20%
Lateral Dimension
20%
Pattern-based Approach
20%
Selective Growth
20%
Wire Structure
20%
Electron Beam Lithography
20%
Patterned Substrate
20%
Crystal Direction
20%
Time-resolved Photoluminescence
20%
Strained Layers
20%
Low-temperature Photoluminescence
20%
Diffusion-controlled Growth
20%
Wire Pattern
20%
Growth Simulation
20%
Nonlinear Enhancement
20%
Gas-phase Diffusion
20%
Growth Structure
20%
Engineering
Chemical Vapor Deposition
100%
Vapor Deposition
100%
Gallium Arsenide
100%
Indium Gallium Arsenide
100%
Quantum Wire
100%
Silicon Dioxide
40%
High Resolution
20%
Low-Temperature
20%
Nanometre
20%
Growth Condition
20%
Patterning Technique
20%
Gas-Phase
20%
Electron Optical Lithography
20%
Strained Layer
20%
Growth Profile
20%
Material Science
Silicon Dioxide
100%
Gallium Arsenide
100%
Chemical Vapor Deposition
100%
Indium Gallium Arsenide
100%
Photoluminescence
100%
Lithography
50%
Poly Methyl Methacrylate
50%