Fabrication and characterization of capless In0.52Al 0.48As/In0.53Ga0.47As HEMTs

Jae Hyung Jang, Ilesanmi Adesida

Research output: Contribution to journalArticlepeer-review


Capless high electron mobility transistors (HEMTs) were fabricated and their DC and RF performances were characterized. Capless HEMTs did not have highly doped InGaAs cap layer so that gate recess process was not required in the fabrication of capless HEMTs. The electrical performances of the capless HEMTs were compared with those of conventional HEMTs with highly doped InGaAs cap layer. A typical 0.2 μm capless HEMT exhibited a maximum transconductance of 805 mS/mm, a threshold voltage of -0.5 V, and a unity current gain cut-off frequency (fT) of 137 GHz. Capless HEMTs exhibited improved device uniformity compared with conventional HEMTs fabricated by wet gate recess technology.

Original languageEnglish (US)
Pages (from-to)1259-1262
Number of pages4
JournalIEICE Transactions on Electronics
Issue number8
StatePublished - Aug 2006


  • Capless HEMTs
  • InGaAs
  • InP

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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