Fabrication and characterization of an InAlAs/InGaAs/InP ring oscillator using integrated enhancement- and depletion-mode high-electron mobility transistors

A. Mahajan, G. Cueva, M. Arafa, P. Fay, I. Adesida

Research output: Contribution to journalArticle

Abstract

The fabrication and characterization of an 11-stage ring oscillator utilizing integrated enhancement- and depletionmode (E/D-mode) high-electron mobility transistors (HEMT's) in the lattice-matched InAlAs/InGaAs/InGaAs material system is demonstrated. The 0.5-ìçé gate length depletion-mode HEMT's (D-HEMT's) used in the circuit exhibit a threshold voltage (VT) of -365 mV with a standard deviation of 19 mV, while the enhancement-mode HEMT's (E-HEMT's) with identical gate length display a VT of 195 mV with a standard deviation of only 9 mV. The unity current gain cutoff frequency (ft) for both devices is 70 GHz. The extremely high uniformity of the threshold voltages of these devices allowed for the implementation of a ring oscillator utilizing direct coupled FET logic (DCFL). At a supply voltage of 0.4 V, a room temperature propagation delay time (τpd) of 22.4 ps/stage, and a corresponding power dissipation of 120 μW/stage is measured, yielding a power delay product (PDP) of 2.65 fJ/stage. To the best of the authors' knowledge, this is the first demonstration of a circuit employing E/D-HEMT technology in the lattice-matched InP-based material system.

Original languageEnglish (US)
Pages (from-to)391-393
Number of pages3
JournalIEEE Electron Device Letters
Volume18
Issue number8
DOIs
StatePublished - Aug 1 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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