Fabrication and characterization of a 83 MHz high temperature β-SiC MESFET operational amplifier with an AlN isolation layer on (100) 6H-SiC

K. K. Diogu, G. L. Harris, A. Mahajan, I. Adesida, D. F. Moeller, R. A. Bertram

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Engineering & Materials Science