Fabrication and characterization of a 83 MHz high temperature β-SiC MESFET operational amplifier with an AlN isolation layer on (100) 6H-SiC

Keyphrases

• High Temperature 100%
• 6H-SiC 100%
• Isolation Layer 100%
• Operational Amplifier 100%
• SiC MESFET 100%
• Physical Properties 50%
• Chemical Properties 50%
• Direct Ink Writing 50%
• Gate Geometry 50%
• Integrated Circuits 50%
• Materials Technology 50%
• High-frequency Operation 50%
• Electron Beam Lithography 50%
• Processed Material 50%
• Circuit Design 50%
• Design Techniques 50%
• Improved Circuit 50%
• Complementary Device 50%

Engineering

• Operational Amplifier 100%
• Limitations 50%
• Amplifier 50%
• Frequency Operation 50%
• Amplifier Circuit 50%
• Design Technique 50%
• Circuit Design 50%
• Beam Lithography 50%
• Material Technology 50%
• Integrated Circuit 50%