Fabrication and characterization of a 83 MHz high temperature β-SiC MESFET operational amplifier with an AlN isolation layer on (100) 6H-SiC

K. K. Diogu; G. L. Harris; A. Mahajan; I. Adesida; D. F. Moeller; R. A. Bertram

Fabrication and characterization of a 83 MHz high temperature β-SiC MESFET operational amplifier with an AlN isolation layer on (100) 6H-SiC

K. K. Diogu, G. L. Harris, A. Mahajan, I. Adesida, D. F. Moeller, R. A. Bertram

Research output: Contribution to conference › Paper › peer-review

Abstract

Although β-SiC exhibit attractive physical and chemical properties, previous implementation of integrated circuits in the SiC MESFET technology have been hindered by low device gain and lack of complementary devices. These limitations have been overcome by an operational amplifier circuit using improved circuit design techniques and processing/materials technology. This amplifier has been implemented with 1μm gate geometries using direct write e-beam lithography to achieve high frequency operation.

Original language	English (US)
Pages	160-161
Number of pages	2
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA Duration: Jun 24 1996 → Jun 26 1996

Other

Other	Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC
City	Santa Barbara, CA, USA
Period	6/24/96 → 6/26/96

ASJC Scopus subject areas

General Engineering

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Fabrication and characterization of a 83 MHz high temperature β-SiC MESFET operational amplifier with an AlN isolation layer on (100) 6H-SiC. / Diogu, K. K.; Harris, G. L.; Mahajan, A. et al.
1996. 160-161 Paper presented at Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC, Santa Barbara, CA, USA.

Research output: Contribution to conference › Paper › peer-review

Diogu, KK, Harris, GL, Mahajan, A, Adesida, I, Moeller, DF & Bertram, RA 1996, 'Fabrication and characterization of a 83 MHz high temperature β-SiC MESFET operational amplifier with an AlN isolation layer on (100) 6H-SiC', Paper presented at Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC, Santa Barbara, CA, USA, 6/24/96 - 6/26/96 pp. 160-161.

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abstract = "Although β-SiC exhibit attractive physical and chemical properties, previous implementation of integrated circuits in the SiC MESFET technology have been hindered by low device gain and lack of complementary devices. These limitations have been overcome by an operational amplifier circuit using improved circuit design techniques and processing/materials technology. This amplifier has been implemented with 1μm gate geometries using direct write e-beam lithography to achieve high frequency operation.",

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AU - Mahajan, A.

AU - Adesida, I.

AU - Moeller, D. F.

AU - Bertram, R. A.

PY - 1996

Y1 - 1996

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AB - Although β-SiC exhibit attractive physical and chemical properties, previous implementation of integrated circuits in the SiC MESFET technology have been hindered by low device gain and lack of complementary devices. These limitations have been overcome by an operational amplifier circuit using improved circuit design techniques and processing/materials technology. This amplifier has been implemented with 1μm gate geometries using direct write e-beam lithography to achieve high frequency operation.

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Fabrication and characterization of a 83 MHz high temperature β-SiC MESFET operational amplifier with an AlN isolation layer on (100) 6H-SiC

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