Extraordinary temperature amplification in ion-stimulated surface processes at low energies

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Molecular dynamics simulations of low-energy noble-gas atoms impacting Si and Ge surfaces reveal a new, unexpectedly strong trade-off between the energy threshold for point defect formation and substrate temperature. Nonuniformities in the net surface potential induced by thermal vibrations dramatically affect the locality of momentum transfer to the surface, thereby amplifying the effect of temperature by several orders of magnitude. This amplification may offer a new means for selecting specific elementary rate processes during plasma processing or ion-beam-assisted deposition.

Original languageEnglish (US)
Article number205409
Pages (from-to)2054091-2054094
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number20
StatePublished - Nov 15 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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