Extent of Voltage Sensor Movement during Gating of Shaker K+ Channels

David J. Posson, Paul R Selvin

Research output: Contribution to journalArticle

Abstract

Voltage-driven activation of Kv channels results from conformational changes of four voltage sensor domains (VSDs) that surround the K+ selective pore domain. How the VSD helices rearrange during gating is an area of active research. Luminescence resonance energy transfer (LRET) is a powerful spectroscopic ruler uniquely suitable for addressing the conformational trajectory of these helices. Using a geometric analysis of numerous LRET measurements, we were able to estimate LRET probe positions relative to existing structural models. The experimental movement of helix S4 does not support a large 15-20 Å transmembrane "paddle-type" movement or a near-zero Å vertical "transporter-type" model. Rather, our measurements demonstrate a moderate S4 displacement of 10 ± 5 Å, with a vertical component of 5 ± 2 Å. The S3 segment moves 2 ± 1 Å in the opposite direction and is therefore not moving as an S3-S4 rigid body.

Original languageEnglish (US)
Pages (from-to)98-109
Number of pages12
JournalNeuron
Volume59
Issue number1
DOIs
StatePublished - Jul 10 2008

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Energy Transfer
Luminescence
Structural Models
Research

Keywords

  • MOLNEURO
  • PROTEINS

ASJC Scopus subject areas

  • Neuroscience(all)

Cite this

Extent of Voltage Sensor Movement during Gating of Shaker K+ Channels. / Posson, David J.; Selvin, Paul R.

In: Neuron, Vol. 59, No. 1, 10.07.2008, p. 98-109.

Research output: Contribution to journalArticle

Posson, David J. ; Selvin, Paul R. / Extent of Voltage Sensor Movement during Gating of Shaker K+ Channels. In: Neuron. 2008 ; Vol. 59, No. 1. pp. 98-109.
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