Abstract
A new Monte Carlo simulation including generation of secondary electrons combined with development process was applied to study ultimate resolution of electron beam lithography. M. Gryzinski's excitation function was used for single electron excitation processes and for generating secondary electrons, while the inelastic mean free path proposed by M. P. Seah and W. A. Dench for organic materials and the energy loss spectrum obtained by J. J. Ritsko were used for simulating the inelastic scattering processes of the secondaries. The etching process used is a time evolution development using a model for polymethylmethacrylate (PMMA). The calculations were made to assess the line-profile resist development of 30 nm-thick films of PMMA on 60 nm-thick silicon substrate for line exposure by a parallel electron beam 6 nm wide at 50 keV. The result shows a developed profile given by the contour representing the shortest evolution time which intersects the substrate is approximately equals 18 nm wide at the surface. The theoretical result was compared with the experimental study of ultimate resolution of electron beam lithography.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1367-1371 |
| Number of pages | 5 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 1 |
| Issue number | 4 |
| DOIs | |
| State | Published - 1983 |
| Event | Proc of the Int Symp on Electron, Ion, and Photon Beams - Los Angeles, CA, USA Duration: May 31 1983 → Jun 3 1983 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering