Exploring the prospects for a nanometer-scale gene chip

V. Dimitrov, A. Aksimentiev, Klaus J Schulten, J. Heng, T. Sorsch, W. Mansfield, J. Miner, G. P. Watson, R. Cirelli, F. Klemens, J. Bower, E. Ferry, A. Taylor, A. Kornblit, B. Dorvel, Q. Zhao, G. Timp

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We are exploring the feasibility of sequencing a single molecule of DNA using a revolutionary type of silicon integrated circuit that incorporates an on-chip nanopore mechanism with a molecular trap. The essential component is a single, nanometer-diameter pore in a robust, nanometer-thick membrane formed from a Metal Oxide Semiconductor (MOS) capacitor. To sequence the molecule, the voltage induced by the dipole moment associated with each base is measured using the electrodes on the capacitor as the DNA translocates through the pore.

Original languageEnglish (US)
Title of host publication2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs
StatePublished - Dec 1 2006
Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
Duration: Dec 10 2006Dec 13 2006

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2006 International Electron Devices Meeting, IEDM
CountryUnited States
CitySan Francisco, CA
Period12/10/0612/13/06

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Dimitrov, V., Aksimentiev, A., Schulten, K. J., Heng, J., Sorsch, T., Mansfield, W., Miner, J., Watson, G. P., Cirelli, R., Klemens, F., Bower, J., Ferry, E., Taylor, A., Kornblit, A., Dorvel, B., Zhao, Q., & Timp, G. (2006). Exploring the prospects for a nanometer-scale gene chip. In 2006 International Electron Devices Meeting Technical Digest, IEDM [4154422] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346987