TY - GEN
T1 - Exploiting parallelism in resonators for large voltage gain in low power wake up radio front ends
AU - Lu, Ruochen
AU - Manzaneque, Tomas
AU - Yang, Yansong
AU - Gong, Songbin
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/4/24
Y1 - 2018/4/24
N2 - This paper reports a lithium niobate (LiNbO3) resonator array that, when used as a passive voltage amplifier, can produce a passive resonant voltage gain among the highest reported thus far for low-power wake-up radio front-ends. The high voltage gain is obtained by exploiting parallelism in the form of 56 arrayed identical shear horizontal mode resonators. The array of LiNbO3 devices is designed to simultaneously enable a large static capacitance of 1.05 pF, a spurious mode free response, and a large figure of merit (FoM=kt2-0 of 120, all of which are subsequently demonstrated for the first time for a large resonator array. As a result, voltage gains over 20 or 26 dB have been achieved for highly reactive loadings of typical CMOS wakeup radio front-end input. In addition to the high voltage gain, the array also features a high Q of 915, which produces to 3 dB FBW of 0.1% for filtering noise and interference in the RF ambience.
AB - This paper reports a lithium niobate (LiNbO3) resonator array that, when used as a passive voltage amplifier, can produce a passive resonant voltage gain among the highest reported thus far for low-power wake-up radio front-ends. The high voltage gain is obtained by exploiting parallelism in the form of 56 arrayed identical shear horizontal mode resonators. The array of LiNbO3 devices is designed to simultaneously enable a large static capacitance of 1.05 pF, a spurious mode free response, and a large figure of merit (FoM=kt2-0 of 120, all of which are subsequently demonstrated for the first time for a large resonator array. As a result, voltage gains over 20 or 26 dB have been achieved for highly reactive loadings of typical CMOS wakeup radio front-end input. In addition to the high voltage gain, the array also features a high Q of 915, which produces to 3 dB FBW of 0.1% for filtering noise and interference in the RF ambience.
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U2 - 10.1109/MEMSYS.2018.8346663
DO - 10.1109/MEMSYS.2018.8346663
M3 - Conference contribution
AN - SCOPUS:85046999175
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 747
EP - 750
BT - 2018 IEEE Micro Electro Mechanical Systems, MEMS 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 31st IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2018
Y2 - 21 January 2018 through 25 January 2018
ER -