Exploiting parallelism in resonators for large voltage gain in low power wake up radio front ends

Ruochen Lu, Tomas Manzaneque, Yansong Yang, Songbin Gong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reports a lithium niobate (LiNbO3) resonator array that, when used as a passive voltage amplifier, can produce a passive resonant voltage gain among the highest reported thus far for low-power wake-up radio front-ends. The high voltage gain is obtained by exploiting parallelism in the form of 56 arrayed identical shear horizontal mode resonators. The array of LiNbO3 devices is designed to simultaneously enable a large static capacitance of 1.05 pF, a spurious mode free response, and a large figure of merit (FoM=kt2-0 of 120, all of which are subsequently demonstrated for the first time for a large resonator array. As a result, voltage gains over 20 or 26 dB have been achieved for highly reactive loadings of typical CMOS wakeup radio front-end input. In addition to the high voltage gain, the array also features a high Q of 915, which produces to 3 dB FBW of 0.1% for filtering noise and interference in the RF ambience.

Original languageEnglish (US)
Title of host publication2018 IEEE Micro Electro Mechanical Systems, MEMS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages747-750
Number of pages4
ISBN (Electronic)9781538647820
DOIs
StatePublished - Apr 24 2018
Event31st IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2018 - Belfast, United Kingdom
Duration: Jan 21 2018Jan 25 2018

Publication series

NameProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Volume2018-January
ISSN (Print)1084-6999

Other

Other31st IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2018
Country/TerritoryUnited Kingdom
CityBelfast
Period1/21/181/25/18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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