Experiments and simulations on a few-electron quantum dot circuit with integrated charge read-out

R. Hanson, J. M. Elzerman, L. H.Willems Van Beveren, L. M.K. Vandersypen, L. H. Zhang, P. Matagne, J. P. Leburton, L. P. Kouwenhoven

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report measurements and simulations on a fully tunable double quantum dot circuit, integrated with two quantum point contacts that serve as charge detectors. The circuit is defined in a two-dimensional electron gas by means of surface gates on top of a GaAs/AlGaAs heterostructure. Full control over the electron number (down to zero), the dot-lead coupling and the inter-dot tunnel coupling is experimentally demonstrated. Computer simulations can map out the double dot charging diagram and show that the charge sensitivity can be significantly enhanced by improving the design of the circuit.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages44-49
Number of pages6
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/TerritoryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

ASJC Scopus subject areas

  • General Physics and Astronomy

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