TY - JOUR
T1 - Experimental test chamber design for optics exposure testing and debris characterization of a xenon discharge produced plasma source for extreme ultraviolet lithography
AU - Thompson, Keith C.
AU - Antonsen, Erik L.
AU - Hendricks, Matthew R.
AU - Jurczyk, Brian E.
AU - Williams, M.
AU - Ruzic, D. N.
N1 - Funding Information:
This work performed at the University of Illinois at Urbana-Champaign is partially funded by International SEMATECH, Contract #308380 OF and Intel Components Research, Contract #SRA03-159, with assistance from XTREME Technologies GmbH. This research was partially carried out at the Center for Microanalysis of Materials at the University of Illinois, which is partially supported by the US Department of Energy under grant DEFG02-91-ER45439. The authors acknowledge XTREME Technologies GmbH and especially Dr. Tran Duc Chin for their expertise and support with the operation of the plasma source used. We thank the Theoretical and Applied Mechanics Machine shop and Electrical and Computer Engineering Machine Shop at the University of Illinois for the work they did on several elements of the experimental setup described here.
PY - 2006/3
Y1 - 2006/3
N2 - A commercial EUV light source is currently used in the MS-13 EUV Micro Exposure Tool (MET) produced by Exitech Ltd. The source uses a xenon z-pinch discharge to produce 13.5 nm light intended for use in extreme ultraviolet lithography (EUVL). During operation, an erosive flux of particles is ejected from the pinch plasma, contributing to limitations in the lifetime of nearby collector optics. A diagnostic chamber is presented that permits characterization of the debris fields present, exposure of optical samples, and evaluation of debris mitigation techniques. Available diagnostics include a Faraday cup, a spherical sector energy analyzer (ESA), and a EUV photodiode. This paper details the chamber design and initial results of source characterization. Faraday cup analysis shows that the maximum theoretical ion energy is 53 keV, ESA measurements show the presence of Xe+, Xe 2+, Ar+, W+, and Mo+ ions, and microanalysis of exposed mirror samples is used to show the erosive effects of plasma exposure.
AB - A commercial EUV light source is currently used in the MS-13 EUV Micro Exposure Tool (MET) produced by Exitech Ltd. The source uses a xenon z-pinch discharge to produce 13.5 nm light intended for use in extreme ultraviolet lithography (EUVL). During operation, an erosive flux of particles is ejected from the pinch plasma, contributing to limitations in the lifetime of nearby collector optics. A diagnostic chamber is presented that permits characterization of the debris fields present, exposure of optical samples, and evaluation of debris mitigation techniques. Available diagnostics include a Faraday cup, a spherical sector energy analyzer (ESA), and a EUV photodiode. This paper details the chamber design and initial results of source characterization. Faraday cup analysis shows that the maximum theoretical ion energy is 53 keV, ESA measurements show the presence of Xe+, Xe 2+, Ar+, W+, and Mo+ ions, and microanalysis of exposed mirror samples is used to show the erosive effects of plasma exposure.
KW - Debris mitigation
KW - Extreme ultraviolet
KW - Microlithography
KW - Plasma
KW - z-Pinch
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U2 - 10.1016/j.mee.2005.11.012
DO - 10.1016/j.mee.2005.11.012
M3 - Article
AN - SCOPUS:33244496207
SN - 0167-9317
VL - 83
SP - 476
EP - 484
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 3
ER -