The microelectronics and microelectromechanical systems industries have had a continuing need for new on-line process and quality control methods to nondestructively characterize wafer bonding. Recently, wafer bonding has been used to produce microfluidic devices that contain interconnected channels and cavities at the bond interface. Highly localized strains near these features have been shown to initiate cracks from sharp corners, leading to device failure. In the present work, we quantify the residual stress fields present in silicon wafers - etched with geometries having dimensions similar to common microfluidic device channels and cavities - that are anodically bonded to virgin Pyrex wafers using standard procedures. These samples are inspected using an infrared grey-field polariscope to obtain quantitative residual stress fields near and between the etched geometries. We find that the residual stress magnitude depends upon: 1) feature geometry, 2) interactions between geometric features and the approaching bond front, and 3) bonding parameters.