Experimental stress mapping of etched cavity semiconductor devices

Robert Inzinga, Gavin P. Horn, Harley T. Johnson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The microelectronics and microelectromechanical systems industries have had a continuing need for new on-line process and quality control methods to nondestructively characterize wafer bonding. Recently, wafer bonding has been used to produce microfluidic devices that contain interconnected channels and cavities at the bond interface. Highly localized strains near these features have been shown to initiate cracks from sharp corners, leading to device failure. In the present work, we quantify the residual stress fields present in silicon wafers - etched with geometries having dimensions similar to common microfluidic device channels and cavities - that are anodically bonded to virgin Pyrex wafers using standard procedures. These samples are inspected using an infrared grey-field polariscope to obtain quantitative residual stress fields near and between the etched geometries. We find that the residual stress magnitude depends upon: 1) feature geometry, 2) interactions between geometric features and the approaching bond front, and 3) bonding parameters.

Original languageEnglish (US)
Title of host publicationSociety for Experimental Mechanics - SEM Annual Conference and Exposition on Experimental and Applied Mechanics 2009
Pages779-785
Number of pages7
StatePublished - Dec 1 2009
EventSEM Annual Conference and Exposition on Experimental and Applied Mechanics 2009 - Albuquerque, NM, United States
Duration: Jun 1 2009Jun 4 2009

Publication series

NameSociety for Experimental Mechanics - SEM Annual Conference and Exposition on Experimental and Applied Mechanics 2009
Volume2

Other

OtherSEM Annual Conference and Exposition on Experimental and Applied Mechanics 2009
CountryUnited States
CityAlbuquerque, NM
Period6/1/096/4/09

ASJC Scopus subject areas

  • Computational Mechanics

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  • Cite this

    Inzinga, R., Horn, G. P., & Johnson, H. T. (2009). Experimental stress mapping of etched cavity semiconductor devices. In Society for Experimental Mechanics - SEM Annual Conference and Exposition on Experimental and Applied Mechanics 2009 (pp. 779-785). (Society for Experimental Mechanics - SEM Annual Conference and Exposition on Experimental and Applied Mechanics 2009; Vol. 2).