Abstract
Experimental measurements of the recombination lifetime profile induced by proton implantation processes are presented. Results show the capability of the differential technique to monitor lifetime engineering processes.
Original language | English (US) |
---|---|
Pages | 283-285 |
Number of pages | 3 |
State | Published - 2000 |
Event | 12th International Symposium on Power Semiconductor Devices and ICs - Toulouse, France Duration: May 22 2000 → May 25 2000 |
Other
Other | 12th International Symposium on Power Semiconductor Devices and ICs |
---|---|
Country/Territory | France |
City | Toulouse |
Period | 5/22/00 → 5/25/00 |
Keywords
- Lifetime
- Silicon characterisation
ASJC Scopus subject areas
- Electrical and Electronic Engineering