Abstract
Experimental measurements of the recombination lifetime profile induced by proton implantation processes are presented. Results show the capability of the differential technique to monitor lifetime engineering processes.
| Original language | English (US) |
|---|---|
| Pages | 283-285 |
| Number of pages | 3 |
| State | Published - 2000 |
| Event | 12th International Symposium on Power Semiconductor Devices and ICs - Toulouse, France Duration: May 22 2000 → May 25 2000 |
Other
| Other | 12th International Symposium on Power Semiconductor Devices and ICs |
|---|---|
| Country/Territory | France |
| City | Toulouse |
| Period | 5/22/00 → 5/25/00 |
Keywords
- Lifetime
- Silicon characterisation
ASJC Scopus subject areas
- Electrical and Electronic Engineering