Experimental measurements of recombination lifetime in proton irradiated power devices.

S. Daliento, A. Sanseverino, P. Spirito, G. Busatto, James E Wiss

Research output: Contribution to conferencePaper

Abstract

Experimental measurements of the recombination lifetime profile induced by proton implantation processes are presented. Results show the capability of the differential technique to monitor lifetime engineering processes.

Original languageEnglish (US)
Pages283-285
Number of pages3
StatePublished - Dec 1 2000
Event12th International Symposium on Power Semiconductor Devices and ICs - Toulouse, France
Duration: May 22 2000May 25 2000

Other

Other12th International Symposium on Power Semiconductor Devices and ICs
CountryFrance
CityToulouse
Period5/22/005/25/00

Keywords

  • Lifetime
  • Silicon characterisation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Daliento, S., Sanseverino, A., Spirito, P., Busatto, G., & Wiss, J. E. (2000). Experimental measurements of recombination lifetime in proton irradiated power devices.. 283-285. Paper presented at 12th International Symposium on Power Semiconductor Devices and ICs, Toulouse, France.