Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping

H. W. Then, M. Feng, N. Holonyak, C. H. Wu

Research output: Contribution to journalArticlepeer-review

Abstract

The authors show that the electrical characteristics of an n-p-n transistor structure can be used to determine experimentally, under dynamical operating conditions, the effective carrier lifetime of injected minority carriers in the quantum-well (QW) base region of a heterojunction bipolar light-emitting transistor. The carrier lifetime is progressively reduced from 134 ps (no base QW) to ∼35 ps by inserting single or double QWs of increasing width to enhance the effective capture cross section for injected carriers (electrons), and is further reduced to ∼10 ps by increasing the p -type doping from 5× 1018 to 4× 1019 cm-3.

Original languageEnglish (US)
Article number033505
JournalApplied Physics Letters
Volume91
Issue number3
DOIs
StatePublished - Aug 1 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping'. Together they form a unique fingerprint.

Cite this