@article{c9c24baabad1465cac578b1eb370487a,
title = "Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping",
abstract = "The authors show that the electrical characteristics of an n-p-n transistor structure can be used to determine experimentally, under dynamical operating conditions, the effective carrier lifetime of injected minority carriers in the quantum-well (QW) base region of a heterojunction bipolar light-emitting transistor. The carrier lifetime is progressively reduced from 134 ps (no base QW) to ∼35 ps by inserting single or double QWs of increasing width to enhance the effective capture cross section for injected carriers (electrons), and is further reduced to ∼10 ps by increasing the p -type doping from 5× 1018 to 4× 1019 cm-3.",
author = "Then, {H. W.} and M. Feng and N. Holonyak and Wu, {C. H.}",
note = "The authors are grateful for the support of DARPA Contract No. HR0011-04-1-0034 (Hyper-Uniform Nano-photonics Technologies, HUNT Center). One of the authors (N.H.) is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and another author (M.F.) for the support of the Nick Holonyak, Jr. Chair of Electrical and Computer Engineering. The authors wish to thank R. Chan, G. Walter, B. F. Chu-Kung, and A. James for their contributions to this project.",
year = "2007",
doi = "10.1063/1.2759263",
language = "English (US)",
volume = "91",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "3",
}