Experimental determination of quantum and centroid capacitance in arsenideantimonide quantum-well MOSFETs incorporating nonparabolicity effect

Ashkar Ali, Himanshu Madan, Rajiv Misra, Ashish Agrawal, Peter Schiffer, J. Brad Boos, Brian R. Bennett, Suman Datta

Research output: Contribution to journalArticlepeer-review

Abstract

Experimental gate capacitance Cg versus gate voltage data for InAs0.8Sb0.2 quantum-well MOSFET (QW-MOSFET) is analyzed using a physics-based analytical model to obtain the quantum capacitance C Q and centroid capacitance Ccent. The nonparabolic electronic band structure of the InAs0.8Sb0.2 QW is incorporated in the model. The effective mass extracted from Shubnikovde Haas magnetotransport measurements is in excellent agreement with that extracted from capacitance measurements. Our analysis confirms that in the operational range of InAs0.8Sb0.2 QW-MOSFETs, quantization and nonparabolicity in the QW enhance CQ and Ccent. Our quantitative model also provides an accurate estimate of the various contributing factors toward Cg scaling in future arsenideantimonide MOSFETs.

Original languageEnglish (US)
Article number5723732
Pages (from-to)1397-1403
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume58
Issue number5
DOIs
StatePublished - May 2011

Keywords

  • Effective mass
  • high-κ dielectric
  • InAsSb
  • interface states
  • nonparabolicity
  • quantum capacitance
  • split capacitance-voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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