Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600 GHz

Walid Hafez; Milton Feng

doi:10.1063/1.1897831

Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600 GHz

Walid Hafez, Milton Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Pseudomorphic InPInGaAs heterojunction bipolar transistors (PHBTs) using a compositionally graded collector (10% indium grading) and graded base (6% indium grading) to reduce the transit time of the device are reported. A 0.4×6 μ m2 HBT achieves excellent f _T values of 604 GHz (associated f _MAX =246 GHz) at a collector current density of 16.8 mAμ m2, with a dc gain of 65 and a breakdown voltage of BVCEO =1.7 V.

Original language	English (US)
Article number	152101
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	15
DOIs	https://doi.org/10.1063/1.1897831
State	Published - 2005

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Physics and Astronomy (miscellaneous)

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10.1063/1.1897831

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@article{078e12502cce4424b7624a7733d42f9a,

title = "Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600 GHz",

abstract = "Pseudomorphic InPInGaAs heterojunction bipolar transistors (PHBTs) using a compositionally graded collector (10% indium grading) and graded base (6% indium grading) to reduce the transit time of the device are reported. A 0.4×6 μ m2 HBT achieves excellent f T values of 604 GHz (associated f MAX =246 GHz) at a collector current density of 16.8 mAμ m2, with a dc gain of 65 and a breakdown voltage of BVCEO =1.7 V.",

author = "Walid Hafez and Milton Feng",

note = "Funding Information: The authors would like to thank the Intel Corporation for fellowship support, the members of the High Speed Integrated Circuit Laboratory, as well as the Electrical and Computer Engineering Department of the University of Illinois at Urbana-Champaign for support of the Holonyak professorship chair. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "2005",

doi = "10.1063/1.1897831",

language = "English (US)",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

TY - JOUR

T1 - Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600 GHz

AU - Hafez, Walid

AU - Feng, Milton

N1 - Funding Information: The authors would like to thank the Intel Corporation for fellowship support, the members of the High Speed Integrated Circuit Laboratory, as well as the Electrical and Computer Engineering Department of the University of Illinois at Urbana-Champaign for support of the Holonyak professorship chair. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2005

Y1 - 2005

N2 - Pseudomorphic InPInGaAs heterojunction bipolar transistors (PHBTs) using a compositionally graded collector (10% indium grading) and graded base (6% indium grading) to reduce the transit time of the device are reported. A 0.4×6 μ m2 HBT achieves excellent f T values of 604 GHz (associated f MAX =246 GHz) at a collector current density of 16.8 mAμ m2, with a dc gain of 65 and a breakdown voltage of BVCEO =1.7 V.

AB - Pseudomorphic InPInGaAs heterojunction bipolar transistors (PHBTs) using a compositionally graded collector (10% indium grading) and graded base (6% indium grading) to reduce the transit time of the device are reported. A 0.4×6 μ m2 HBT achieves excellent f T values of 604 GHz (associated f MAX =246 GHz) at a collector current density of 16.8 mAμ m2, with a dc gain of 65 and a breakdown voltage of BVCEO =1.7 V.

UR - http://www.scopus.com/inward/record.url?scp=20844433843&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20844433843&partnerID=8YFLogxK

U2 - 10.1063/1.1897831

DO - 10.1063/1.1897831

M3 - Article

AN - SCOPUS:20844433843

SN - 0003-6951

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 152101

ER -

Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600 GHz

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