Pseudomorphic InPInGaAs heterojunction bipolar transistors (PHBTs) using a compositionally graded collector (10% indium grading) and graded base (6% indium grading) to reduce the transit time of the device are reported. A 0.4×6 μ m2 HBT achieves excellent f T values of 604 GHz (associated f MAX =246 GHz) at a collector current density of 16.8 mAμ m2, with a dc gain of 65 and a breakdown voltage of BVCEO =1.7 V.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 2005|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)