Experimental characterization of enhancement mode gallium-nitride power field-effect transistors at cryogenic temperatures

Juan Colmenares, Thomas Foulkes, Christopher Barth, Tomas Modeert, Robert C.N. Pilawa-Podgurski

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High power density converters in combination with cryogenic power systems could have a significant impact on the electrification of transportation systems as well as other energy conversion systems. In this study, the cryogenic temperature performance of an EPC gallium-nitride (GaN) power field-effect transistor was evaluated. At -195°C, an 85 % reduction in on-state resistance, and a 16 % increase in threshold voltage were experimentally measured. Moreover, using a double-pulse test, no major changes in switching characteristics were observed. GaN transistors are thus excellent choices for operation at cryogenic temperatures.

Original languageEnglish (US)
Title of host publicationWiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages129-134
Number of pages6
ISBN (Electronic)9781509015764
DOIs
StatePublished - Dec 27 2016
Event4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016 - Fayetteville, United States
Duration: Nov 7 2016Nov 9 2016

Publication series

NameWiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications

Other

Other4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016
CountryUnited States
CityFayetteville
Period11/7/1611/9/16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Energy Engineering and Power Technology
  • Electronic, Optical and Magnetic Materials

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    Colmenares, J., Foulkes, T., Barth, C., Modeert, T., & Pilawa-Podgurski, R. C. N. (2016). Experimental characterization of enhancement mode gallium-nitride power field-effect transistors at cryogenic temperatures. In WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications (pp. 129-134). [7799923] (WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDA.2016.7799923