Experimental and Theoretical Investigation of the DC and High-Frequency Characteristics of the Negative Differential Resistance in Pseudomorphic AlGaAs/InGaAs/GaAs MODFET's

Joy Laskar; Jean Pierre Leburton

doi:10.1109/16.121681

Experimental and Theoretical Investigation of the DC and High-Frequency Characteristics of the Negative Differential Resistance in Pseudomorphic AlGaAs/InGaAs/GaAs MODFET's

Joy Laskar, Jean Pierre Leburton

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The authors investigated the negative differential resistance (NDR) in the I-V characteristics of pseudomorphic AlGaAs/InGaAs/GaAs modulation doped field-effect transistors (MODFETs) with gate lengths of 0.3 μm. They experimentally verified the existence of abrupt multiple NDR in both the input circuit and the output circuit. The NDR occurs over a short range of drain voltage (less than 200 mV) and gate voltage (less than 5 mV) for NDR induced by thermionic emission. The authors provide a general interpretation of the measured DC results based on tunneling real-space transfer (TRST) which occurs because of the formation of hybrid excited states across the InGaAs channel and AlGaAs donor layer. The existence of stable reflection is verified in both the input and output circuits with stable broadband frequency response in the output circuit to at least 49 GHz. These results show that NDR via TRST in pseudomorphic MODFETs can provide wideband frequency response not limited by the electron transit time from source to drain.

Original language	English (US)
Pages (from-to)	257-263
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	39
Issue number	2
DOIs	https://doi.org/10.1109/16.121681
State	Published - Feb 1992

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.121681

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@article{e64ff565510f4f15bdd7b9d53f097807,

title = "Experimental and Theoretical Investigation of the DC and High-Frequency Characteristics of the Negative Differential Resistance in Pseudomorphic AlGaAs/InGaAs/GaAs MODFET's",

abstract = "The authors investigated the negative differential resistance (NDR) in the I-V characteristics of pseudomorphic AlGaAs/InGaAs/GaAs modulation doped field-effect transistors (MODFETs) with gate lengths of 0.3 μm. They experimentally verified the existence of abrupt multiple NDR in both the input circuit and the output circuit. The NDR occurs over a short range of drain voltage (less than 200 mV) and gate voltage (less than 5 mV) for NDR induced by thermionic emission. The authors provide a general interpretation of the measured DC results based on tunneling real-space transfer (TRST) which occurs because of the formation of hybrid excited states across the InGaAs channel and AlGaAs donor layer. The existence of stable reflection is verified in both the input and output circuits with stable broadband frequency response in the output circuit to at least 49 GHz. These results show that NDR via TRST in pseudomorphic MODFETs can provide wideband frequency response not limited by the electron transit time from source to drain.",

author = "Joy Laskar and Leburton, {Jean Pierre}",

note = "Funding Information: Manuscript received March 13, 1991; revised July 2, 1991. This work was supported by the NSF under Grants EET 87-19100 and CDR-43166, the JSEP under Contract N00014-84C-0149, and AT&T Affiliates 52. The review of the paper was arranged by Associate Editor N. Moll.",

year = "1992",

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doi = "10.1109/16.121681",

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pages = "257--263",

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T1 - Experimental and Theoretical Investigation of the DC and High-Frequency Characteristics of the Negative Differential Resistance in Pseudomorphic AlGaAs/InGaAs/GaAs MODFET's

AU - Laskar, Joy

AU - Leburton, Jean Pierre

N1 - Funding Information: Manuscript received March 13, 1991; revised July 2, 1991. This work was supported by the NSF under Grants EET 87-19100 and CDR-43166, the JSEP under Contract N00014-84C-0149, and AT&T Affiliates 52. The review of the paper was arranged by Associate Editor N. Moll.

PY - 1992/2

Y1 - 1992/2

N2 - The authors investigated the negative differential resistance (NDR) in the I-V characteristics of pseudomorphic AlGaAs/InGaAs/GaAs modulation doped field-effect transistors (MODFETs) with gate lengths of 0.3 μm. They experimentally verified the existence of abrupt multiple NDR in both the input circuit and the output circuit. The NDR occurs over a short range of drain voltage (less than 200 mV) and gate voltage (less than 5 mV) for NDR induced by thermionic emission. The authors provide a general interpretation of the measured DC results based on tunneling real-space transfer (TRST) which occurs because of the formation of hybrid excited states across the InGaAs channel and AlGaAs donor layer. The existence of stable reflection is verified in both the input and output circuits with stable broadband frequency response in the output circuit to at least 49 GHz. These results show that NDR via TRST in pseudomorphic MODFETs can provide wideband frequency response not limited by the electron transit time from source to drain.

AB - The authors investigated the negative differential resistance (NDR) in the I-V characteristics of pseudomorphic AlGaAs/InGaAs/GaAs modulation doped field-effect transistors (MODFETs) with gate lengths of 0.3 μm. They experimentally verified the existence of abrupt multiple NDR in both the input circuit and the output circuit. The NDR occurs over a short range of drain voltage (less than 200 mV) and gate voltage (less than 5 mV) for NDR induced by thermionic emission. The authors provide a general interpretation of the measured DC results based on tunneling real-space transfer (TRST) which occurs because of the formation of hybrid excited states across the InGaAs channel and AlGaAs donor layer. The existence of stable reflection is verified in both the input and output circuits with stable broadband frequency response in the output circuit to at least 49 GHz. These results show that NDR via TRST in pseudomorphic MODFETs can provide wideband frequency response not limited by the electron transit time from source to drain.

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Experimental and Theoretical Investigation of the DC and High-Frequency Characteristics of the Negative Differential Resistance in Pseudomorphic AlGaAs/InGaAs/GaAs MODFET's

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