This article presents experimental and computational studies of a phase shifting photolithographic technique that uses binary elastomeric phase masks in conformal contact with layers of photoresist. The work incorporates optimized masks formed by casting and curing prepolymers to the elastomer poly(dimethylsiloxane) against anisotropically etched structures of single crystal silicon on Si O2 Si. Scanning optical microscopy and full-vector finite element computations reveal the important near field and proximity optical effects. Representative structures fabricated with this technique, including several that exploit subtle features in the intensity distributions, illustrate some of the capabilities.
|Original language||English (US)|
|Number of pages||8|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Mar 2006|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering