Exciton spectroscopy of near-surface GaAs/Al
                        0.3
                        Ga
                        0.7
                        As quantum wells - the new method of band bending investigation

V. N. Astratov; Yurii A Vlasov

Exciton spectroscopy of near-surface GaAs/Al _0.3 Ga _0.7 As quantum wells - the new method of band bending investigation

Research output: Contribution to journal › Conference article › peer-review

Abstract

The photoluminescence (PL) properties of GaAs/AlGaAs near-surface quantum wells (QW) are studied. The redshift (up to 10 mev for 50 angstroms QW) and quenching (down to 10 ^-4 ) of QW PL line were observed with decreasing ofthe distance from the surface by wet etching. The model based on quantum-confined Stark effect caused by the band bending was revealed by observation of long-range interaction (>300 angstroms) of confined states with the surface and of increase of the redshift for the thicker Qw's. As a result the high-resolution (approximately 20 angstroms) method of field distribution determination is developed; the dependence of field screening on photoexcitation intensity is determined. Obtained data are important for understanding of the radiative properties of etched nanostructures.

Original language	English (US)
Pages (from-to)	599-604
Number of pages	6
Journal	Materials Science Forum
Volume	143-4
Issue number	pt 1
State	Published - Dec 1 1994
Externally published	Yes
Event	Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria Duration: Jul 18 1993 → Jul 23 1993

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Exciton spectroscopy of near-surface GaAs/Al _0.3 Ga _0.7 As quantum wells - the new method of band bending investigation . / Astratov, V. N.; Vlasov, Yurii A.

In: Materials Science Forum, Vol. 143-4, No. pt 1, 01.12.1994, p. 599-604.

Research output: Contribution to journal › Conference article › peer-review

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title = " Exciton spectroscopy of near-surface GaAs/Al 0.3 Ga 0.7 As quantum wells - the new method of band bending investigation ",

abstract = " The photoluminescence (PL) properties of GaAs/AlGaAs near-surface quantum wells (QW) are studied. The redshift (up to 10 mev for 50 angstroms QW) and quenching (down to 10 -4 ) of QW PL line were observed with decreasing ofthe distance from the surface by wet etching. The model based on quantum-confined Stark effect caused by the band bending was revealed by observation of long-range interaction (>300 angstroms) of confined states with the surface and of increase of the redshift for the thicker Qw's. As a result the high-resolution (approximately 20 angstroms) method of field distribution determination is developed; the dependence of field screening on photoexcitation intensity is determined. Obtained data are important for understanding of the radiative properties of etched nanostructures. ",

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AU - Astratov, V. N.

AU - Vlasov, Yurii A

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Y1 - 1994/12/1

N2 - The photoluminescence (PL) properties of GaAs/AlGaAs near-surface quantum wells (QW) are studied. The redshift (up to 10 mev for 50 angstroms QW) and quenching (down to 10 -4 ) of QW PL line were observed with decreasing ofthe distance from the surface by wet etching. The model based on quantum-confined Stark effect caused by the band bending was revealed by observation of long-range interaction (>300 angstroms) of confined states with the surface and of increase of the redshift for the thicker Qw's. As a result the high-resolution (approximately 20 angstroms) method of field distribution determination is developed; the dependence of field screening on photoexcitation intensity is determined. Obtained data are important for understanding of the radiative properties of etched nanostructures.

AB - The photoluminescence (PL) properties of GaAs/AlGaAs near-surface quantum wells (QW) are studied. The redshift (up to 10 mev for 50 angstroms QW) and quenching (down to 10 -4 ) of QW PL line were observed with decreasing ofthe distance from the surface by wet etching. The model based on quantum-confined Stark effect caused by the band bending was revealed by observation of long-range interaction (>300 angstroms) of confined states with the surface and of increase of the redshift for the thicker Qw's. As a result the high-resolution (approximately 20 angstroms) method of field distribution determination is developed; the dependence of field screening on photoexcitation intensity is determined. Obtained data are important for understanding of the radiative properties of etched nanostructures.

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T2 - Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3)

Y2 - 18 July 1993 through 23 July 1993

ER -

Exciton spectroscopy of near-surface GaAs/Al _0.3 Ga _0.7 As quantum wells - the new method of band bending investigation

Abstract

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