Exciton spectroscopy of near-surface GaAs/Al 0.3 Ga 0.7 As quantum wells - the new method of band bending investigation

V. N. Astratov, Yurii A Vlasov

Research output: Contribution to journalConference articlepeer-review


The photoluminescence (PL) properties of GaAs/AlGaAs near-surface quantum wells (QW) are studied. The redshift (up to 10 mev for 50 angstroms QW) and quenching (down to 10 -4 ) of QW PL line were observed with decreasing ofthe distance from the surface by wet etching. The model based on quantum-confined Stark effect caused by the band bending was revealed by observation of long-range interaction (>300 angstroms) of confined states with the surface and of increase of the redshift for the thicker Qw's. As a result the high-resolution (approximately 20 angstroms) method of field distribution determination is developed; the dependence of field screening on photoexcitation intensity is determined. Obtained data are important for understanding of the radiative properties of etched nanostructures.

Original languageEnglish (US)
Pages (from-to)599-604
Number of pages6
JournalMaterials Science Forum
Issue numberpt 1
StatePublished - Dec 1 1994
Externally publishedYes
EventProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria
Duration: Jul 18 1993Jul 23 1993

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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