Abstract
The photoluminescence (PL) properties of GaAs/AlGaAs near-surface quantum wells (QW) are studied. The redshift (up to 10 mev for 50 angstroms QW) and quenching (down to 10 -4 ) of QW PL line were observed with decreasing ofthe distance from the surface by wet etching. The model based on quantum-confined Stark effect caused by the band bending was revealed by observation of long-range interaction (>300 angstroms) of confined states with the surface and of increase of the redshift for the thicker Qw's. As a result the high-resolution (approximately 20 angstroms) method of field distribution determination is developed; the dependence of field screening on photoexcitation intensity is determined. Obtained data are important for understanding of the radiative properties of etched nanostructures.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 599-604 |
| Number of pages | 6 |
| Journal | Materials Science Forum |
| Volume | 143-4 |
| Issue number | pt 1 |
| State | Published - Dec 1 1994 |
| Externally published | Yes |
| Event | Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria Duration: Jul 18 1993 → Jul 23 1993 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering