Excitation of a microdischarge with a reverse-biased pn junction

C. J. Wagner, S. J. Park, James Gary Eden

Research output: Contribution to journalArticlepeer-review

Abstract

Excitation of cylindrical microdischarges, 300-360 μm in diameter, by a reverse-biased, Si pn junction has been demonstrated. Devices fabricated from commercial diodes have been operated with Ne gas pressures in the 200-700 Torr range and dc voltages as low as 120 V. For a Ne gas pressure of 700 Torr, the wavelength-integrated (300-800 nm) output power - emitted into a solid angle of ∼6 X 10-2 sr - of a 360-μm-diam device is 48± 1 μW for an operating current and voltage of 5.7±0.1 mA and 134 V, respectively. This hybrid solid state/gas device represents the demonstration of the generation of a gas discharge by a pn junction and lends itself to the fabrication of large arrays.

Original languageEnglish (US)
Pages (from-to)709-711
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number6
DOIs
StatePublished - Feb 5 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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