@article{5cfb09ac1090409fb2031d446d8fb98b,
title = "Exchange biasing of the ferromagnetic semiconductor (Ga,Mn)As by MnO (invited)",
abstract = "We provide an overview of progress on the exchange biasing of a ferromagnetic semiconductor (Ga1-x Mnx As) by proximity to an antiferromagnetic oxide layer (MnO). We present a detailed characterization study of the antiferromagnetic layer using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray reflection. In addition, we describe the variation of the exchange and coercive fields with temperature and cooling field for multiple samples.",
author = "Eid, {K. F.} and Stone, {M. B.} and O. Maksimov and Shih, {T. C.} and Ku, {K. C.} and W. Fadgen and Palmstr{\o}m, {C. J.} and P. Schiffer and N. Samarth",
note = "Funding Information: This research has been supported by the DARPA-SPINS program under Grant Numbers N00014-99-1093, -99-1-1005, -00-1-0951, and -01-1-0830, by ONR N00014-99-1-0071, and by NSF DMR 01-01318. We thank J. Shallenberger for the useful discussion and assistance with XPS measurements. We thank M. S. Angelone for the help with the XRR measurements. Work at ORNL was carried out under Contract No. DE-AC05-00OR22725, U. S. Department of Energy.",
year = "2005",
month = may,
day = "15",
doi = "10.1063/1.1846033",
language = "English (US)",
volume = "97",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "10",
}