Deposition of Si on Ge(111) at growth temperatures of 450-500°C by molecular beam epitaxy produces high densities (>1011 cm-2) of small (width ≈10 nm) coherent three-dimensional Si islands. At intermediate temperatures, 550-600°C, islands become incoherent with the Ge(111) substrate when their widths exceed ≈18 nm. The activation energy for the maximum island density prior to coalescence is ≈1.7 eV over a wide temperature range 450-650°C.
|Original language||English (US)|
|Number of pages||5|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Jan 1 2001|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics