EVIDENCE OF CRYSTALLOGRAPHIC ETCHING IN (100)GaAs USING SiCl//4 REACTIVE ION ETCHING.

Keyphrases

• Gallium Arsenide 100%
• Orientation Dependence 100%
• Etch Profile 100%
• SiCl4 100%
• Crystallographic Etching 100%
• Low Pressure 50%
• Sidewall 50%
• Rate Profile 50%
• Etching Rate 50%
• High Aspect Ratio 50%
• Sawtooth 50%
• Crystal Plane 50%
• Argon 50%
• Grating Structure 50%
• Pressure Range 50%
• Reactive Ion Etching 50%
• Vertical Profile 50%
• Etching Effect 50%
• Moderate Pressure 50%
• Vertical Sidewall 50%
• Low Power Density 50%
• Profile Characteristics 50%
• Edge Sharpness 50%
• Pattern Profiles 50%
• Submicrometre Structure 50%

Engineering

• Side Wall 100%
• Gallium Arsenide 100%
• Power Density 50%
• High Aspect Ratio 50%
• Etch Rate 50%
• Pressure Range 50%

Material Science

• Gallium Arsenide 100%
• Density 50%
• Reactive Ion Etching 50%