Abstract
Etch rate and etch profile characteristics of (100)GaAs in SiCl//4 reactive ion etching have been studied in the pressure range of 2-110 mTorr. Pronounced crystallographic or orientation dependent etching effects were observed at moderate pressures around 20 mTorr at lower power densities. Etch profiles became vertical at lower pressures. Therefore, pattern profiles with perfectly vertical sidewalls or with sidewalls defined by crystallographic planes can be realized merely by changing the etch conditions. The addition of argon to the etch gas increased the edge sharpness of the vertical profiles and eliminated any trace of orientation dependent etching. Sawtooth gratings and submicrometer structures with high aspect ratios have been fabricated.
Original language | English (US) |
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Title of host publication | Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena |
Pages | 406-409 |
Number of pages | 4 |
Volume | 3 |
Edition | 1 |
DOIs | |
State | Published - Jan 1984 |
Externally published | Yes |
Event | Proc of the 1984 Int Symp on Electron, Ion, and Photon Beams - Tarrytown, NY, USA Duration: May 29 1984 → Jun 1 1984 |
Other
Other | Proc of the 1984 Int Symp on Electron, Ion, and Photon Beams |
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City | Tarrytown, NY, USA |
Period | 5/29/84 → 6/1/84 |
ASJC Scopus subject areas
- Engineering(all)