EVIDENCE OF CRYSTALLOGRAPHIC ETCHING IN (100)GaAs USING SiCl//4 REACTIVE ION ETCHING.

J. Z. Li; E. D. Wolf; I. Adesida

doi:10.1116/1.583274

EVIDENCE OF CRYSTALLOGRAPHIC ETCHING IN (100)GaAs USING SiCl//4 REACTIVE ION ETCHING.

J. Z. Li, E. D. Wolf, I. Adesida

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Etch rate and etch profile characteristics of (100)GaAs in SiCl//4 reactive ion etching have been studied in the pressure range of 2-110 mTorr. Pronounced crystallographic or orientation dependent etching effects were observed at moderate pressures around 20 mTorr at lower power densities. Etch profiles became vertical at lower pressures. Therefore, pattern profiles with perfectly vertical sidewalls or with sidewalls defined by crystallographic planes can be realized merely by changing the etch conditions. The addition of argon to the etch gas increased the edge sharpness of the vertical profiles and eliminated any trace of orientation dependent etching. Sawtooth gratings and submicrometer structures with high aspect ratios have been fabricated.

Original language	English (US)
Title of host publication	Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Pages	406-409
Number of pages	4
Volume	3
Edition	1
DOIs	https://doi.org/10.1116/1.583274
State	Published - Jan 1984
Externally published	Yes
Event	Proc of the 1984 Int Symp on Electron, Ion, and Photon Beams - Tarrytown, NY, USA Duration: May 29 1984 → Jun 1 1984

Other

Other	Proc of the 1984 Int Symp on Electron, Ion, and Photon Beams
City	Tarrytown, NY, USA
Period	5/29/84 → 6/1/84

ASJC Scopus subject areas

General Engineering

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10.1116/1.583274

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title = "EVIDENCE OF CRYSTALLOGRAPHIC ETCHING IN (100)GaAs USING SiCl//4 REACTIVE ION ETCHING.",

abstract = "Etch rate and etch profile characteristics of (100)GaAs in SiCl//4 reactive ion etching have been studied in the pressure range of 2-110 mTorr. Pronounced crystallographic or orientation dependent etching effects were observed at moderate pressures around 20 mTorr at lower power densities. Etch profiles became vertical at lower pressures. Therefore, pattern profiles with perfectly vertical sidewalls or with sidewalls defined by crystallographic planes can be realized merely by changing the etch conditions. The addition of argon to the etch gas increased the edge sharpness of the vertical profiles and eliminated any trace of orientation dependent etching. Sawtooth gratings and submicrometer structures with high aspect ratios have been fabricated.",

author = "Li, {J. Z.} and Wolf, {E. D.} and I. Adesida",

year = "1984",

month = jan,

doi = "10.1116/1.583274",

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isbn = "0883184648",

volume = "3",

pages = "406--409",

booktitle = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",

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note = "Proc of the 1984 Int Symp on Electron, Ion, and Photon Beams ; Conference date: 29-05-1984 Through 01-06-1984",

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AU - Adesida, I.

PY - 1984/1

Y1 - 1984/1

N2 - Etch rate and etch profile characteristics of (100)GaAs in SiCl//4 reactive ion etching have been studied in the pressure range of 2-110 mTorr. Pronounced crystallographic or orientation dependent etching effects were observed at moderate pressures around 20 mTorr at lower power densities. Etch profiles became vertical at lower pressures. Therefore, pattern profiles with perfectly vertical sidewalls or with sidewalls defined by crystallographic planes can be realized merely by changing the etch conditions. The addition of argon to the etch gas increased the edge sharpness of the vertical profiles and eliminated any trace of orientation dependent etching. Sawtooth gratings and submicrometer structures with high aspect ratios have been fabricated.

AB - Etch rate and etch profile characteristics of (100)GaAs in SiCl//4 reactive ion etching have been studied in the pressure range of 2-110 mTorr. Pronounced crystallographic or orientation dependent etching effects were observed at moderate pressures around 20 mTorr at lower power densities. Etch profiles became vertical at lower pressures. Therefore, pattern profiles with perfectly vertical sidewalls or with sidewalls defined by crystallographic planes can be realized merely by changing the etch conditions. The addition of argon to the etch gas increased the edge sharpness of the vertical profiles and eliminated any trace of orientation dependent etching. Sawtooth gratings and submicrometer structures with high aspect ratios have been fabricated.

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BT - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

T2 - Proc of the 1984 Int Symp on Electron, Ion, and Photon Beams

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ER -

EVIDENCE OF CRYSTALLOGRAPHIC ETCHING IN (100)GaAs USING SiCl//4 REACTIVE ION ETCHING.

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