Evidence from atomistic simulations of fluctuation electron microscopy for preferred local orientations in amorphous silicon

S. V. Khare, S. M. Nakhmanson, P. M. Voyles, P. Keblinski, J. R. Abelson

Research output: Contribution to journalArticlepeer-review

Abstract

The preferred local orientations in amorphous silicon were investigated for evidence from atomistic simulations of fluctuation electron microscopy (FEM). The order consisted of correlations in the orientation of nearby paracrystalline grains or anisotropy in the grain shape. When all the grains were oriented along the same axis, the second peak was larger than the first, provided that there was a sufficient volume fraction of the grain. The results show that the peak height ratio in FEM is sensitive to orientational order and the shape of the paracrystalline grains.

Original languageEnglish (US)
Pages (from-to)745-747
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number5
DOIs
StatePublished - Aug 2 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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