Evidence for an As4 sticking coefficient ≳0.5 in the molecular beam epitaxy of GaAs

C. Webb, D. Liu, J. N. Eckstein

Research output: Contribution to journalArticlepeer-review


Since the early work of Foxon and Joyce [Surf. Sci. 50, 434 (1975)] it has been accepted that the maximum sticking coefficient for As4 on GaAs in MBE growth is 0.5. Our results, based upon dc photoemission behavior and oscillations both in RHEED and photoemission, call into question this assumption and suggest that it is possible to observe near unity sticking coefficients provided the nucleation of Ga droplets has not occurred.

Original languageEnglish (US)
Pages (from-to)571-573
Number of pages3
JournalApplied Physics Letters
Issue number5
StatePublished - 1992
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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