Since the early work of Foxon and Joyce [Surf. Sci. 50, 434 (1975)] it has been accepted that the maximum sticking coefficient for As4 on GaAs in MBE growth is 0.5. Our results, based upon dc photoemission behavior and oscillations both in RHEED and photoemission, call into question this assumption and suggest that it is possible to observe near unity sticking coefficients provided the nucleation of Ga droplets has not occurred.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)