Evaluation of SCR-based ESD protection devices in 90nm and 65nm CMOS technologies

James Di Sarro, Kiran Chatty, Robert Gauthier, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We compare a number of promising SCR-based ESD protection devices in 90nm and 65nm CMOS technologies implemented with a consistent layout. The devices are evaluated using ESD metrics such as trigger voltage and current, on-resistance, failure current, turn-on time and DC leakage current. We also report that SCR turn-on time is highly dependent on the amplitude of the applied pulse.

Original languageEnglish (US)
Title of host publication2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual
Pages348-357
Number of pages10
DOIs
StatePublished - Sep 25 2007
Event45th Annual IEEE International Reliability Physics Symposium 2007, IRPS - Phoenix, AZ, United States
Duration: Apr 15 2007Apr 19 2007

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Other

Other45th Annual IEEE International Reliability Physics Symposium 2007, IRPS
CountryUnited States
CityPhoenix, AZ
Period4/15/074/19/07

Keywords

  • ESD protection circuits
  • Electrostatic discharge (ESD)
  • Silicon Controlled Rectifier (SCR)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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