EUV mask preparation considering blank defects mitigation

Yuelin Du, Hongbo Zhang, Martin D.F. Wong, Rasit O. Topaloglu

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Due to the absence of defect-free blanks in extreme ultraviolet (EUV) lithography, defect mitigation is necessary before mass production. Currently almost all the defect mitigation methods are focused on mitigating the defect impact of one blank on one design. However, since the EUV mask vendors always have multiple designs and blanks in hand, it is also very important to consider all designs and blanks together to mitigate the total defect impact. This paper proposes a new EUV mask preparation strategy which optimally matches a set of defective blanks with multiple designs to mitigate the total defect impact. In the first step, an efficient layout relocation algorithm is adopted to minimize the defect impact of each blank on each design. Then, depending on whether blank defects are allowed to be compensated, we formulate the two different types of design-blank matching problems as flow problems and solve them optimally. Compared to sequential matching, the proposed simultaneous matching strategy shows advantages in both blank utilization and defect compensation cost minimization.

Original languageEnglish (US)
Title of host publicationPhotomask Technology 2011
StatePublished - 2011
EventPhotomask Technology 2011 - Monterey, CA, United States
Duration: Sep 19 2011Sep 22 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherPhotomask Technology 2011
Country/TerritoryUnited States
CityMonterey, CA


  • Blank defect mitigation
  • Design blank matching
  • EUV
  • Mask preparation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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