ETS-A: A new electrothermal simulator for CMOS VLSI circuits

Yi Kan Cheng, Elyse Rosenbaum, Sung Mo Kang

Research output: Contribution to journalConference articlepeer-review

Abstract

In this paper, we present a method for finding the CMOS VLSI chip temperature profile and the corresponding circuit performance by using a new electrothermal simulator, ETS-A. We use a sequence of procedures: layout extraction with x-y coordinates for individual transistors, fast timing-based power calculation, analytical thermal simulation using integral transform, followed by the electrothermal iterations until convergence. ETS-A takes advantage of the fast timing simulator while preserving the accuracy with use of temperature-dependent region-wise quadratic (RWQ) MOS transistor modeling techniques. The novel mixed 3-D & 1-D thermal simulator implemented in ETS-A efficiently takes into account the chip packaging and the thermal boundary conditions (BCs), which were often ignored in typical thermal simulations. With ETS-A, on-chip temperature profile can be calculated and further applied to guide the temperature-driven module placement as well as chip packaging designs.

Original languageEnglish (US)
Pages (from-to)566-570
Number of pages5
JournalProceedings of European Design and Test Conference
StatePublished - Jan 1 1996
EventProceedings of the 1996 European Design & Test Conference - Paris, Fr
Duration: Mar 11 1996Mar 14 1996

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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