Etching of silicon carbide for device fabrication and through via-hole formation

Chemical Compounds

• Silicon Carbide 100%
• Etching 80%
• Plasma 55%
• Microelectronics 50%
• Inductively Coupled Plasma 44%
• Coil 43%
• Surface 28%
• Pressure 25%
• Mixture 19%
• Reaction Yield 18%
• Ion 17%
• Application 14%

Engineering & Materials Science

• Silicon carbide 96%
• Plasmas 82%
• Inductively coupled plasma 66%
• Plasma etching 66%
• Bias voltage 55%
• Microelectronics 47%

Physics & Astronomy

• silicon carbides 86%
• etching 67%
• fabrication 54%
• pressure chambers 28%
• masking 24%
• machining 23%
• microelectronics 22%
• gas mixtures 21%
• coils 18%
• electric potential 12%
• ions 10%