Etching of InP in methane-based plasmas

I. Adesida, E. Andideh, C. Jones, N. Finnegan

Research output: Contribution to conferencePaper

Abstract

Analyses of InP and SiO2 mask surfaces etched in CH4/H2 plasma have been performed using X-ray photoelectron spectroscopy and Auger electron spectroscopy. A relatively thick polymer layer was detected on the mask surface, whereas polymer deposition on etched InP surface was insignificant even under plasma conditions designed to enhance polymer formation. Subsequent processing of etched InP in O2 plasma followed by a dip in HCl/H2O was found to be sufficient for obtaining clean surfaces with good stoichiometry.

Original languageEnglish (US)
Pages405-408
Number of pages4
DOIs
StatePublished - 1990
EventSecond International Conference on Indium Phosphide and Related Materials - Denver, CO, USA
Duration: Apr 23 1990Apr 25 1990

Other

OtherSecond International Conference on Indium Phosphide and Related Materials
CityDenver, CO, USA
Period4/23/904/25/90

ASJC Scopus subject areas

  • Engineering(all)

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    Adesida, I., Andideh, E., Jones, C., & Finnegan, N. (1990). Etching of InP in methane-based plasmas. 405-408. Paper presented at Second International Conference on Indium Phosphide and Related Materials, Denver, CO, USA, . https://doi.org/10.1109/iciprm.1990.203056