Etching of InP in methane-based plasmas

I. Adesida, E. Andideh, C. Jones, N. Finnegan

Research output: Contribution to conferencePaperpeer-review


Analyses of InP and SiO2 mask surfaces etched in CH4/H2 plasma have been performed using X-ray photoelectron spectroscopy and Auger electron spectroscopy. A relatively thick polymer layer was detected on the mask surface, whereas polymer deposition on etched InP surface was insignificant even under plasma conditions designed to enhance polymer formation. Subsequent processing of etched InP in O2 plasma followed by a dip in HCl/H2O was found to be sufficient for obtaining clean surfaces with good stoichiometry.

Original languageEnglish (US)
Number of pages4
StatePublished - 1990
Externally publishedYes
EventSecond International Conference on Indium Phosphide and Related Materials - Denver, CO, USA
Duration: Apr 23 1990Apr 25 1990


OtherSecond International Conference on Indium Phosphide and Related Materials
CityDenver, CO, USA

ASJC Scopus subject areas

  • General Engineering


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