Etching of InP in methane-based plasmas

I. Adesida; E. Andideh; C. Jones; N. Finnegan

doi:10.1109/iciprm.1990.203056

Etching of InP in methane-based plasmas

I. Adesida, E. Andideh, C. Jones, N. Finnegan

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Research output: Contribution to conference › Paper › peer-review

Abstract

Analyses of InP and SiO₂ mask surfaces etched in CH₄/H₂ plasma have been performed using X-ray photoelectron spectroscopy and Auger electron spectroscopy. A relatively thick polymer layer was detected on the mask surface, whereas polymer deposition on etched InP surface was insignificant even under plasma conditions designed to enhance polymer formation. Subsequent processing of etched InP in O₂ plasma followed by a dip in HCl/H₂O was found to be sufficient for obtaining clean surfaces with good stoichiometry.

Original language	English (US)
Pages	405-408
Number of pages	4
DOIs	https://doi.org/10.1109/iciprm.1990.203056
State	Published - 1990
Event	Second International Conference on Indium Phosphide and Related Materials - Denver, CO, USA Duration: Apr 23 1990 → Apr 25 1990

Other

Other	Second International Conference on Indium Phosphide and Related Materials
City	Denver, CO, USA
Period	4/23/90 → 4/25/90

ASJC Scopus subject areas

Engineering(all)

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title = "Etching of InP in methane-based plasmas",

abstract = "Analyses of InP and SiO2 mask surfaces etched in CH4/H2 plasma have been performed using X-ray photoelectron spectroscopy and Auger electron spectroscopy. A relatively thick polymer layer was detected on the mask surface, whereas polymer deposition on etched InP surface was insignificant even under plasma conditions designed to enhance polymer formation. Subsequent processing of etched InP in O2 plasma followed by a dip in HCl/H2O was found to be sufficient for obtaining clean surfaces with good stoichiometry.",

author = "I. Adesida and E. Andideh and C. Jones and N. Finnegan",

year = "1990",

doi = "10.1109/iciprm.1990.203056",

language = "English (US)",

pages = "405--408",

note = "Second International Conference on Indium Phosphide and Related Materials ; Conference date: 23-04-1990 Through 25-04-1990",

}

TY - CONF

T1 - Etching of InP in methane-based plasmas

AU - Adesida, I.

AU - Andideh, E.

AU - Jones, C.

AU - Finnegan, N.

PY - 1990

Y1 - 1990

N2 - Analyses of InP and SiO2 mask surfaces etched in CH4/H2 plasma have been performed using X-ray photoelectron spectroscopy and Auger electron spectroscopy. A relatively thick polymer layer was detected on the mask surface, whereas polymer deposition on etched InP surface was insignificant even under plasma conditions designed to enhance polymer formation. Subsequent processing of etched InP in O2 plasma followed by a dip in HCl/H2O was found to be sufficient for obtaining clean surfaces with good stoichiometry.

AB - Analyses of InP and SiO2 mask surfaces etched in CH4/H2 plasma have been performed using X-ray photoelectron spectroscopy and Auger electron spectroscopy. A relatively thick polymer layer was detected on the mask surface, whereas polymer deposition on etched InP surface was insignificant even under plasma conditions designed to enhance polymer formation. Subsequent processing of etched InP in O2 plasma followed by a dip in HCl/H2O was found to be sufficient for obtaining clean surfaces with good stoichiometry.

UR - http://www.scopus.com/inward/record.url?scp=0025531673&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025531673&partnerID=8YFLogxK

U2 - 10.1109/iciprm.1990.203056

DO - 10.1109/iciprm.1990.203056

M3 - Paper

AN - SCOPUS:0025531673

SP - 405

EP - 408

T2 - Second International Conference on Indium Phosphide and Related Materials

Y2 - 23 April 1990 through 25 April 1990

ER -

Etching of InP in methane-based plasmas

Abstract

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