Abstract
Analyses of InP and SiO2 mask surfaces etched in CH4/H2 plasma have been performed using X-ray photoelectron spectroscopy and Auger electron spectroscopy. A relatively thick polymer layer was detected on the mask surface, whereas polymer deposition on etched InP surface was insignificant even under plasma conditions designed to enhance polymer formation. Subsequent processing of etched InP in O2 plasma followed by a dip in HCl/H2O was found to be sufficient for obtaining clean surfaces with good stoichiometry.
Original language | English (US) |
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Pages | 405-408 |
Number of pages | 4 |
DOIs | |
State | Published - 1990 |
Externally published | Yes |
Event | Second International Conference on Indium Phosphide and Related Materials - Denver, CO, USA Duration: Apr 23 1990 → Apr 25 1990 |
Other
Other | Second International Conference on Indium Phosphide and Related Materials |
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City | Denver, CO, USA |
Period | 4/23/90 → 4/25/90 |
ASJC Scopus subject areas
- Engineering(all)