Etching mechanism of the single-step through-silicon-via dry etch using SF₆/C₄F₈ chemistry

Physics & Astronomy

• chemistry 79%
• discontinuity 33%
• electric potential 20%
• etching 70%
• flow velocity 14%
• interactions 7%
• ions 8%
• partial pressure 17%
• plasma chemistry 25%
• polymers 10%
• positive ions 20%
• profiles 40%
• silicon 49%
• sputtering 14%

Engineering & Materials Science

• Beam plasma interactions 24%
• Bias voltage 38%
• Flow rate 11%
• Fluxes 12%
• Ions 14%
• Plasmas 85%
• Polymers 11%
• Positive ions 19%
• Silicon 73%
• Sputtering 19%

Chemical Compounds

• Chemistry 54%
• Etching 83%
• Flow Kinetics 11%
• Ion 6%
• Partial Pressure 14%
• Plasma 57%
• Purity 31%
• Sputtering 16%