Etching characteristics of Al_xGa_1-xAs in (NH₄)₂S_x solutions

Keyphrases

• Etching Rate 100%
• AlxGa1-xN 100%
• Excess Sulfur 100%
• Etch Characteristics 100%
• Gallium Arsenide 66%
• Reaction Rate 33%
• Activation Energy 33%
• Sulfur 33%
• Time Dependence 33%
• Etching Process 33%
• Passivated 33%
• Rate Limiting 33%
• Linear Time 33%
• Chemical Processes 33%
• Sulfate Solution 33%
• Al Mole Fraction 33%
• (NH4)2S 33%
• Sulfur Concentration 33%

Earth and Planetary Sciences

• Time Dependence 100%
• Sulphur Concentration 100%

Material Science

• Gallium Arsenide 100%
• Activation Energy 50%